FREQUENCY TRANSISTOR. NE685 Datasheet

NE685 TRANSISTOR. Datasheet pdf. Equivalent

Part NE685
Description SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Feature www.DataSheet4U.com SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL.
Manufacture NEC
Total Page 17 Pages
Datasheet
Download NE685 Datasheet



NE685
www.DataSheet4U.com
SURFACE MOUNT NPN SILICON NE685
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• LOW COST
• SMALL AND ULTRA SMALL SIZE PACKAGES
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz
• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
PTLhEeAfSoEl l oNwOdiTnaEgt :apsahretent uamr ebdenerossti g n .DESCRIPTION
NEC's family of high frequency, low cost, surface mount
t h i s f o r n e w f o rdevices are well suited for portable wireless communications
and cellular radio applications.
f r o m e n d e d o f f i c eThe NE685 series of high fT (12 GHz) devices is suitable for
r e c o m m c a l l s a l e svery low voltage/low current, low noise applications. These
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
Pdleetaasiel s :ELECTRICAL CHARACTERISTICS (TA = 25°C)
N E 6 8 5 3 9 RPART NUMBER1
EIAJ2 REGISTERED NUMBER
PACKAGE OUTLINE
NE68518
2SC5015
18
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
NE68519
2SC5010
19
NE68530
2SC4959
30
NE68533
2SC4955
33
NE68539/39R
2SC4957
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
NFMIN
GNF
MAG
|S21E|2
hFE
ICBO
IEBO
CRE4
Gain Bandwidth Product at
VCE = 3V, IC = 10 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 3 V, IC = 3 mA, f = 2.0 GHz
Associated Gain at
VCE = 3V, IC = 3 mA, f = 2.0 GHz
Maximum Available Gain at
VCE = 3 V, IC = 10 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 3V, IC =10 mA, f = 2.0 GHz
Forward Current Gain3 at
VCE = 3 V, IC = 10 mA
Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
GHz
12
12
12
12
12
dB 1.5 2.5 1.5 2.5 1.5 2.5 1.5 2.5 1.5 2.5
dB 8.5
7.5
7
7 7.5
dB 12 11 10 10.5 11
dB 9 11
79
7 8.5
78
9 10
75 110 150 75 110 150 75 110 150 75 110 150 75 110 150
µA 0.1 0.1 0.1 0.1 0.1
µA 0.1 0.1 0.1 0.1 0.1
pF 0.3 0.5 0.4 0.7 0.4 0.7 0.4 0.7 0.3 0.5
PT Total Power Dissipation
mW 150 125 150 180 180
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W
833
1000
833
620
620
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
200
200
200
200
200
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW350 µs, duty cycle 2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
California Eastern Laboratories



NE685
NE685 SERIES
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO
Collector to Base Voltage
V
9
VCEO
Collector to Emitter Voltage V
6
VEBO
Emitter to Base Voltage
V
2.0
IC Collector Current mA 30
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C -65 to +150
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
NE68518
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG
ANG
Rn/50
VCE = 3 V, IC = 3 mA
500 1.00 21.32 0.63 26 0.56
800 1.15 16.29 0.59 31 0.44
1000 1.20 14.66 0.56 39 0.40
1500 1.35 11.02 0.52 48 0.37
2000
1.50
8.67 0.47
53
0.33
2500
1.65
7.24 0.40
65
0.23
VCE = 3 V, IC = 5 mA
500 1.20 21.15 0.55 19 0.47
800 1.25 17.29 0.51 31 0.42
1000 1.35 15.47 0.49 37 0.38
1500 1.45 11.87 0.46 44 0.35
2000
1.60
9.57 0.42
53
0.33
2500
1.75
7.90 0.36
60
0.22
VCE = 3 V, IC = 10 mA
500 1.55 21.70 0.44 15 0.44
800 1.60 18.13 0.40 30 0.41
1000 1.65 16.20 0.38 36 0.39
1500 1.80 12.85 0.34 44 0.37
2000 1.90 10.60 0.30 50 0.34
2500
2.00
8.82 0.27
55
0.23
NE68519
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG
ANG
Rn/50
VCE = 2.5 V, IC = 0.3 mA
500 1.07 12.6 0.80 17 1.70
800 1.25
8.6 0.79
32
1.55
1000
1.55
6.7 0.75
42
1.41
VCE = 2.5 V, IC = 1.0 mA
500 0.87 16.9 0.73 14 0.80
800 0.99 12.8 0.67 27 0.65
1000
1.08
11.0 0.64
36
0.62
1500
1.31
7.5 0.60
52
0.52
2000
1.65
5.0 0.54
65
0.42
VCE = 3 V, IC = 10 mA
500 1.05 19.3 0.65 14 0.57
800 1.12 15.8 0.58 27 0.50
1000
1.17
13.4 0.55
33
0.45
1500
1.31
9.9 0.50
47
0.38
2000
1.51
7.5 0.43
58
0.32
2500
1.75
5.5 0.32
69
0.21
VCE = 3 V, IC = 5.0 mA
500 1.33 19.4 0.58 13 0.54
800 1.40 15.3 0.52 26 0.49
1000
1.45
13.5 0.50
33
0.46
1500
1.57
10.0 0.43
46
0.42
2000
1.71
7.5 0.36
54
0.38
2500
1.90
5.6 0.29
60
0.31
NE68530
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG
ANG
Rn/50
VCE = 0.5 V, IC = 0.5 mA
500 0.95 10.87 0.81 15 1.20
800 1.05 7.82 0.75 24 1.02
1000
1.20
6.92 0.72
34
0.86
VCE = 0.75 V, IC = 0.5 mA
500 0.97 11.28 0.82 14 1.15
800 1.15 8.64 0.76 24 1.00
1000
1.25
7.62 0.73
33
0.84
VCE = 1.0 V, IC = 0.25 mA
500 1.10 8.73 0.85 13 1.69
800 1.20 6.83 0.80 25 1.65
1000
1.45
6.67 0.75
36
1.64
VCE = 1.0 V, IC = 0.5 mA
500 0.95 11.93 0.78 12 1.02
800 1.12 8.71 0.76 22 0.99
1000
1.28
8.35 0.69
32
0.86
VCE = 1.0 V, IC = 0.75 mA
500 0.90 12.92 0.77 11 0.92
800 1.02 10.03 0.73 21 0.84
1000
1.18
9.23 0.67
30
0.69
VCE = 1.0 V, IC = 1.0 mA
500 0.88 14.48 0.75 13 0.82
800 1.00 10.96 0.71 21 0.76
1000
1.14
9.83 0.66
29
0.62
VCE = 1.0 V, IC = 3.0 mA
500 0.98 17.29 0.60 10 0.52
800 1.07 13.62 0.57 18 0.50
1000 1.15 12.01 0.54 25 0.47
2000
1.52
6.41 0.43
27
0.38
VCE = 2.5 V, IC = 0.3 mA
500 1.10
800 1.30
1000
1.47
VCE = 2.5 V, IC = 1 mA
10.77
7.48
6.76
0.85
0.81
0.78
14
22
30
1.49
1.45
1.37
500 0.85 15.44 0.73 12 0.91
800 1.04 11.52 0.72 19 0.75
1000 1.16 10.45 0.69 27 0.68
2000
1.60
5.16 0.54
33
0.47
VCE = 2.5 V, IC = 3 mA
500 1.08 18.11 0.65 11 0.60
800 1.15 14.37 0.60 17 0.53
1000 1.22 12.76 0.58 23 0.49
2000
1.68
7.19 0.48
20
0.41
VCE = 3 V, IC = 3 mA
500 1.10 18.10 0.65 10 0.58
800 1.19 14.27 0.61 14 0.50
1000 1.25 12.77 0.60 23 0.49
2000
1.48
7.20 0.50
20
0.42
3000
1.74
5.22 0.32
28
0.22





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)