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SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
NE685 SERIES
rs e b m : u E n ot T t n O r . e a N r n p a g E i DESCRIPTION g t S s n e A i e e E d w h s w PL ll o a r e t o o n f a f r d e e o s f c i Th i f h d f t e o d m s n o e e r l f m a s m l o l rec se ca a e l P s: ELECTRICAL CHARACTERISTICS l i a det 8539R NE6
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER MINI MOLD)
NEC's family of high frequency, low cost, surface mount devices are well suited for portable wireless communications and cellular radio applications.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
The NE685 series of high fT (12 GHz) devices is suitable for very low voltage/low current, low noise applications. These products are ideal for applications up to 2.4 GHz where low cost, high gain, low voltage, and low current are prime concerns.
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
(TA = 25°C)
PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE
NE68518 2SC5015 18
NE68519 2SC5010 19
NE68530 2SC4959 30
NE68533 2SC4955 33
NE68539/39R 2SC4957 39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT NFMIN GNF MAG |S21E|2 hFE ICBO IEBO CRE4 PT RTH(J-A) RTH(J-C) Gain Bandwidth Product at VCE = 3V, IC = 10 mA, f = 2.0 GHz Minimum Noise Figure at VCE = 3 V, IC = 3 mA, f = 2.0 GHz Associated Gain at VCE = 3V, IC = 3 mA, f = 2.0 GHz Maximum Available Gain at VCE = 3 V, IC = 10 mA, f = 2.0 GHz Insertion Power Gain at VCE = 3V, IC =10 mA, f = 2.0 GHz Forward Current Gain3 at VCE = 3 V, IC = 10 mA Collector Cutoff Current at VCB = 5 V, IE = 0 mA Emitter Cutoff Current at VEB = 1 V, IC = 0 mA Feedback Capacitance at VCB = 3 V, IE = 0 mA, f = 1 MHz Total Power Dissipation Thermal Resistance (Junction to Ambient) GHz dB dB dB dB 9 12 1.5 8.5 12 11 7 75 2.5 12 1.5 7.5 11 9 110 150 0.1 0.1 0.4 0.7 125 1000 200 0.4 7 75 2.5 12 1.5 7 10 8.5 110 150 0.1 0.1 0.7 150 833 200 0.4 7 75 2.5 12 1.5 7 10.5 8 110 150 0.1 0.1 0.7 180 620 200 0.3 9 75 2.5 12 1.5 7.5 11 10 110 150 0.1 0.1 0.5 180 620 200 2.5
75 110 150 µA µA pF mW °C/W 0.3 0.1 0.1 0.5 150 833 200
Thermal Resistance(Junction to Case) °C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 2. Electronic Industrial Association of Japan. 3. Pulsed measurement, PW≤350 µs, duty cycle ≤2%. 4. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
California Eastern Laboratories
NE685 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Junction Temperature Storage Temperature UNITS V V V mA °C °C RATINGS 9 6 2.0 30 150 -65 to +150
NE68530 TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50
VCE = 0.5 V, IC = 0.5 mA 500 0.95 10.87 800 1.05 7.82 1000 1.20 6.92 VCE = 0.75 V, IC = 0.5 mA 500 800 1000 0.97 1.15 1.25 11.28 8.64 7.62
0.81 0.75 0.72 0.82 0.76 0.73 0.85 0.80 0.75 0.78 0.76 0.69 0.77 0.73 0.67 0.75 0.71 0.66 0.60 0.57 0.54 0.43 0.85 0.81 0.78 0.73 0.72 0.69 0.54 0.65 0.60 0.58 0.48 0.65 0.61 0.60 0.50 0.32
15 24 34 14 24 33 13 25 36 12 22 32 11 21 30 13 21 29 10 18 25 27 14 22 30 12 19 27 33 11 17 23 20 10 14 23 20 28
1.20 1.02 0.86 1.15 1.00 0.84 1.69 1.65 1.64 1.02 0.99 0.86 0.92 0.84 0.69 0.82 0.76 0.62 0.52 0.50 0.47 0.38 1.49 1.45 1.37 0.91 0.75 0.68 0.47 0.60 0.53 0.49 0.41 0.58 0.50 0.49 0.42 0.22
Note: 1.Operation in excess of any one of these parameters may result in permanent damage.
NE68518 TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50
VCE = 1.0 V, IC = 0.25 mA 500 1.10 8.73 800 1.20 6.83 1000 1.45 6.67 VCE = 1.0 V, IC = 0.5 mA 500 0.95 11.93 800 1.12 8.71 1000 1.28 8.35 VCE = 1.0 V, IC = 0.75 mA 500 0.90 12.92 800 1.02 10.03 1000 1.18 9.23 VCE = 1.0 V, IC = 1.0 mA 500 0.88 800 1.00 1000 1.14 VCE = 1.0 V, IC = 3.0 mA 500 0.98 800 1.07 1000 1.15 2000 1.52 VCE = 2.5 V, IC = 0.3 mA 500 1.10 800 1.30 1000 1.47 VCE = 2.5 V, IC = 1 mA 500 0.85 800 1.04 1000 1.16 2000 1.60 VCE = 2.5 V, IC = 3 mA 500 1.08 800 1.15 1000 1.22 2000 1.68 VCE = 3 V, IC = 3 mA 500 800 1000 2000 3000 1.10 1.19 1.25 1.48 1.74 14.48 10.96 9.83 17.29 13.62 12.01 6.41 10.77 7.48 6.76 15.44 11.52 10.45 5.16 18.11 14.37 12.76 7.19 18.10 14.27 12.77 7.20 5.22
VCE = 3 V, IC = 3 mA 500 1.00 800 1.15 1000 1.20 1500 1.35 2000 1.50 2500 1.65 VCE = 3 V, IC = 5 mA 500 1.20 800 1.25 1000 1.35 1500 1.45 2000 1.60 2500 1.75 VCE = 3 V, IC = 10 mA 500 800 1000 1500 2000 2500 1.55 1.60 1.65 1.80 1.90 2.00
21.32 16.29 14.66 11.02 8.67 7.24 21.15 17.29 15.47 11.87 9.57 7.90 21.70 18.13 16.20 12.85 10.60 8.82
0.63 0.59 0.56 0.52 0.47 0.40 0.55 0.51 0.49 0.46 0.42 0.36 0.44 0.40 0.38 0.34 0.30 0.27
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