SILICON TRANSISTOR. NE685M13 Datasheet

NE685M13 TRANSISTOR. Datasheet pdf. Equivalent

Part NE685M13
Description NPN SILICON TRANSISTOR
Feature www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE685M13 FEATURES • NEW MINIATURE M13 PACKAGE: – .
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Datasheet
Download NE685M13 Datasheet



NE685M13
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NEC's NPN SILICON TRANSISTOR NE685M13
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 12 GHz
• LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
DESCRIPTION
NEC's NE685M13 transistor is designed for low noise, high
gain, and low cost requirements. This high fT part is well suited
for low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M13" package is ideal for today's
portable wireless applications. The NE685 is also available in
six different low cost plastic surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
0.7±0.05
0.5+ñ00..015
(Bottom View)
0.3
23
1
0.1 0.1 0.2 0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
fT
NF
|S21E|2
hFE2
ICBO
IEBO
CRE3
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = ZOPT
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Forward Current Gain at VCE = 3 V, IC = 10 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
UNITS
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE685M13
2SC5617
M13
MIN TYP MAX
12.0
1.5 2.5
7.0 11.0
75 140
0.1
0.1
0.4 0.7
3-155



NE685M13
NE685M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9.0
VCEO Collector to Emitter Voltage V
6.0
VEBO Emitter to Base Voltage
V
2.0
IC Collector Current
mA 30
PT2 Total Power Dissipation
mW
140
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm thick glass epoxy
PCB.
ORDERING INFORMATION
PART NUMBER QUANTITY
NE685M13-T3-A 3k pcs./reel
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
M(1o.0u8ntcemd2oXn
Glass Epoxy
1.0 mm (t) )
PCB
250
200
150
140
100
50
0 25 50 75 100 125 150
Ambient Temperature, TA (ºC)
REVERSE TRANSFER CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.6
f = 1 MHz
0.5
0.4
0.3
0.2
0.1
0 123456789
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT VS.
BASE TO EMITTER VOLTAGE
30
VCE = 3 V
25
20
15
10
5
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage, TBE (V)
COLLECTOR CURRENT VS.
COLLECTOR TO EMITTER VOLTAGE
40
30 300 µA
270 µA
240 µA
20 210 µA
180 µA
150 µA
120 µ A
10 90 µA
60 µA
IB = 30 µA
0 2468
Collector to Emitter Voltage, VCE (V)
3-156





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