NE685M23

www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 FEATURES NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M23 0.5 1 0.25 1.0 0.4 DESCRIPTION The NE685M23 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE685 is also available in six different low cost plastic surface mount package styles. 0.6 0.15 2 3 0.25 0.2 0.15 BOTTOM VIEW PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 10 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 2 GHz Forward Current Gain at VCE = 3 V, IC = 10 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 3 V, IE = 0, f =...