FREQUENCY TRANSISTOR. NE688 Datasheet

NE688 TRANSISTOR. Datasheet pdf. Equivalent

Part NE688
Description SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
Feature www.DataSheet4U.com SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW PHASE NOISE .
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NE688
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SURFACE MOUNT NPN SILICON NE688
HIGH FREQUENCY TRANSISTOR SERIES
FEATURES
• LOW PHASE NOISE DISTORTION
• LOW NOISE: 1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT: IC MAX = 100 mA
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
• ALSO AVAILABLE IN CHIP FORM
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
DESCRIPTION
b e r sNEC's NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
P L E A S E N O T E : p a r t n u m n o tnoise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
T h e f o l l o wdi nagt a s h e e t a r ed e s i g n .phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
t h i s f o r n e wage styles, and in chip form.
f r o m e n d e d o f f i c e f o rELECTRICAL CHARACTERISTICS (TA = 25°C)
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
r e c o m mc a l l s a l e sPART NUMBER1
EIAJ2 REGISTERED NUMBER
PACKAGE OUTLINE
NE68818
2SC5194
18
NE68819
2SC5195
19
NE68830
2SC5193
30
NE68833
2SC5191
33
NE68839/39R
2SC5192/92R
39
P l e a s eSYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
d e t a i l s :fT
N E 6 8 8 1 8NFMIN
N E 6 8 8 3 9NFMIN
N E 6 8 8 3 9 R|S21E|2
|S21E|2
hFE
Gain Bandwidth Product at
VCE = 1V, IC = 3 mA, f = 2.0 GHz
Gain Bandwidth Product at
VCE = 3V, IC = 20 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
Minimum Noise Figure at
VCE = 3 V, IC = 7 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 1V, IC = 3 mA, f = 2.0 GHz
Insertion Power Gain at
VCE = 3V, IC = 20 mA, f = 2.0 GHz
Forward Current Gain3 at
GHz 4 5
4.5 5
4 4.5
4 4.5
4 4.5
GHz
10
9.5
9
8.5
9
dB 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5
dB 1.5 1.5 1.5 1.5 1.5
dB 3.0 4.0
3.0 4.0
2.5 3.5
2.5 3.5
4.0 4.5
dB 8.5 8 6.5 6.5 9
VCE = 1 V, IC = 3 mA
80 160 80
160 80
160 80
160 80
160
ICBO
Collector Cutoff Current
at VCB = 5 V, IE = 0 mA
nA 100 100 100 100 100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA
nA 100 100 100 100 100
CRE4 Feedback Capacitance at
VCB = 1 V, IE = 0 mA, f = 1 MHz
pF
0.65 0.8
0.7 0.8
0.75 0.85
0.75 0.85
0.65 0.8
PT Total Power Dissipation
mW 150 125 150 200 200
RTH(J-A) Thermal Resistance
(Junction to Ambient)
°C/W 833 1000 833 625 625
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW 350 µs, duty cycle 2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
California Eastern Laboratories



NE688
NE688 SERIES
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO
Collector to Base Voltage
V
9
VCEO
Collector to Emitter Voltage V
6
VEBO
Emitter to Base Voltage
V
2.0
IC Collector Current
mA 100
TJ Operating Junction
Temperature
°C 150
TSTG
Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE68818, NE68830
D.C. POWER DERATING CURVE
200
Free Air
100
0
0 50 100 150
Ambient Temperature TA (°C)
NE68833, NE68839
D.C. POWER DERATING CURVE
Free Air
200
100
0
0 50 100 150
Ambient Temperature TA (°C)
NE68819
D.C. POWER DERATING CURVE
150
Free Air
100
50
0
0 50 100 150
Ambient Temperature TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200 µA
25 180 µA
160 µA
20 140 µA
120 µA
15
100 µA
10 80 µA
60 µA
5 40 µA
IB = 20 µA
0
0 2.5 5 7
Collector to Emitter Voltage, VCE (V)





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