SILICON TRANSISTOR. NE688M13 Datasheet

NE688M13 TRANSISTOR. Datasheet pdf. Equivalent

Part NE688M13
Description NPN SILICON TRANSISTOR
Feature www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 FEATURES • NEW MINIATU.
Manufacture NEC
Total Page 2 Pages
Datasheet
Download NE688M13 Datasheet



NE688M13
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PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M13
FEATURES
• NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 9.5 GHz
• LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
• HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
DESCRIPTION
The NE688M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE688
is also available in chip and six different low cost plastic surface
mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
+0.1
0.5 0.05
+0.1
0.150.05
0.3
2
1.0
+0.1
0.05
1
0.35
3 0.7
0.35
3
+0.1
0.2 0.05
1
0.1
0.5±0.05
+0.1
0.1 0.150.05
+0.1
0.125 0.05
2
0.2
Bottom View
0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
fT
NF
|S21E|2
hFE2
ICBO
IEBO
CRE3
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 7 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz
Forward Current Gain at VCE = 1 V, IC = 3 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz
UNITS
GHz
GHz
dB
dB
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE688M13
2SC5616
M13
MIN TYP MAX
45
9.5
1.9 2.5
1.7
34
8
80 145
0.1
0.1
0.7 0.8
California Eastern Laboratories



NE688M13
NE688M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9
VCEO Collector to Emitter Voltage V
6
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA 100
PT2 Total Power Dissipation
mW
140
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
200 µA
25 180 µA
160 µA
20 140 µA
120 µA
15
100 µA
10 80 µA
60 µA
5 40 µA
IB = 20 µA
0
0 2.5 5 7
Collector to Emmiter Voltage, VCE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0 0.5 1
Base to Emmiter Voltage, VBE (V)
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 1 V
100
0
0.1 0.2
0.5 1
2
5 10 20 50 100
Collector Current, IC (mA)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/09/2000





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