FREQUENCY TRANSISTOR. NE696M01 Datasheet

NE696M01 TRANSISTOR. Datasheet pdf. Equivalent

Part NE696M01
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Feature www.DataSheet4U.com NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE696M01 FEATURES • • • • • HIGH .
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Total Page 6 Pages
Datasheet
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NE696M01
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NEC's NPN SILICON HIGH NE696M01
FREQUENCY TRANSISTOR
FEATURES
• HIGH fT:
14 GHz TYP at 3 V, 10 mA
• LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
• HIGH GAIN:
|S21E|2 = 14 dB TYP at 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
DESCRIPTION
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
3
6
0.2 (All Leads)
5
4
SIDE VIEW
0.9 ± 0.1
0.7
0 ~ 0.1
+0.10
0.15 - 0.05
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
ICBO
IEBO
hFE1
fT
Cre2
|S21E|2
NF
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain at VCE = 3 V, IC = 10 mA
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
µA
µA
GHz
pF
dB
dB
MIN
80
Notes:
1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
NE696M01
M01
TYP
120
14
0.15
14
1.6
MAX
0.1
0.1
160
California Eastern Laboratories



NE696M01
NE696M01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9
VCEO Collector to Emitter Voltage V
6
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA 30
PT Total Power Dissipation
mW
150
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ORDERING INFORMATION
PART NUMBER
NE696M01-T1
QUANTITY
3000
PACKAGING
Tape & Reel
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
0 50 100 150
Ambient Temperature, TA (˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 µA
180 µA
15 160 µA
140 µA
120 µA
10 100 µA
80 µA
60 µA
5 40 µA
IB = 20 µA
0
1.0 2.0 3.0
Collector to Emitter Voltage, VCE (V)
NE696M01
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(GHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG
ANG
Rn/50
VCE = 1 V, IC = 3 mA
1.0 1.4
1.4 1.46
1.7 1.55
2.0 1.8
3.0 2.3
VCE = 2 V, IC = 1 mA
0.5 .94
0.8 1.1
1.0 1.25
1.5 1.55
2.0 1.94
3.0 2.65
VCE = 2 V, IC = 5 mA
0.5 1.2
0.8 1.32
1.0 1.47
1.5 1.63
2.0 1.82
3.0 2.17
VCE = 3 V, IC = 5 mA
0.5 1.25
0.8 1.35
1.0 1.41
1.5 1.58
2.0 1.81
3.0 2.29
18.5 0.53
16.4 0.47
15.2 0.43
14.5 0.39
11.0 0.3
16.8 0.72
14.8 0.66
13.8 0.63
11.4 0.56
9.6 0.5
7.0 0.46
23.0 0.49
20.3 0.44
18.8 0.42
15.8 0.39
13.0 0.33
9.8 0.25
24.2 0.5
20.7 0.45
18.8 0.44
15.2 0.41
13.7 0.34
12.0 0.29
79
95
111
132
177
41
65
79
104
138
-173
37
62
76
98
126
173
37
62
78
97
126
164
0.27
0.13
0.19
0.16
0.10
0.52
0.44
0.39
0.31
0.17
0.07
0.38
0.27
0.30
0.23
0.18
0.10
0.39
0.26
0.29
0.24
0.20
0.09
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
20
10
0 0.5 1.0
Base to Emitter Voltage, VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
VCE = 2 V
100
50
VCE = 1 V
20
10
1
2
5 10 20
50
Collector Current, IC (mA)
100





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