SILICON TRANSISTOR. NE699M01 Datasheet

NE699M01 TRANSISTOR. Datasheet pdf. Equivalent

Part NE699M01
Description NPN EPITAXIAL SILICON TRANSISTOR
Feature www.DataSheet4U.com PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAI.
Manufacture NEC
Total Page 6 Pages
Datasheet
Download NE699M01 Datasheet



NE699M01
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PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE NE699M01
HIGH-GAIN AMPLIFICATION
FEATURES
• HIGH fT:
16 GHz TYP at 2 V, 20 mA
• LOW NOISE FIGURE:
NF = 1.1 dB TYP at 2 GHz
• HIGH GAIN:
|S21E|2 = 14 dB TYP at f = 2 GHz
• 6 PIN SMALL MINI MOLD PACKAGE
• EXCELLENT LOW VOLTAGE,
LOW CURRENT PERFORMANCE
DESCRIPTION
The NE699M01 is an NPN high frequency silicon epitaxial
transistor (NE687) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE699M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
3
6
0.2 (All Leads)
5
4
0.9 ± 0.1
0.7
0 ~ 0.1
+0.10
0.15 - 0.05
PIN CONNECTIONS
1. Emitter 4. Emitter
2. Emitter 5. Emitter
3. Base
6. Collector
Note: Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
ICBO
IEBO
hFE1
fT
CRE2
|S21E|2
NF
PARAMETERS AND CONDITIONS
UNITS
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
DC Current Gain at VCE = 2 V, IC = 20 mA
Gain Bandwidth Product at VCE = 2 V, IC = 20mA, f = 2.0GHz GHz
Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz
pF
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2.0 GHz dB
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.0 GHz
dB
MIN
70
13
12
Notes:
1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
NE699M01
M01
TYP
16
0.2
14
1.1
MAX
0.1
0.1
140
0.3
1.8
California Eastern Laboratories



NE699M01
NE699M01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
5
VCEO Collector to Emitter Voltage V
3
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA 30
PT Total Power Dissipation
mW
90
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ORDERING INFORMATION
PART NUMBER
NE699M01-T1
QUANTITY
3000
PACKAGING
Tape & Reel
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100
Free Air
80
90 mW
60
40
20
0 50 100 150
Ambient Temperature, TA (°C) (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 µA
210800 µµAA
180 µA
15 116600 µµAA
114400 µµAA
120 µA
10 110000 µµAA
80 µA
6800 µµAA
4600 µµAA
5 f4s0=µ2A0 µA
IB = 20 µA
0
1.0 2.0 3.0
Collector to Emitter Voltage, VCE (V)
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
VCE = 2 V
40
30
20
10
0 0.5 1.0
Base to Emitter Voltage, VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
VCE = 2 V
100
50
VCE = 1 V
20
10
1
2
5 10 20
50
Collector Current, IC (mA)
100





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