SILICON TRANSISTOR. NE851M13 Datasheet

NE851M13 TRANSISTOR. Datasheet pdf. Equivalent

Part NE851M13
Description NPN SILICON TRANSISTOR
Feature www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M13 FEATURES • NEW MINIATURE M13 PACKAGE: – .
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NE851M13
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NEC's NPN SILICON TRANSISTOR NE851M13
FEATURES
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
IDEAL FOR 3 GHz OSCILLATORS
LOW PHASE NOISE
LOW PUSHING FACTOR
DESCRIPTION
NEC's NE851M13 transistor is designed for oscillator applica-
tions up to 3 GHz. The NE851M13 features low voltage
operation, low phase noise, and high immunty to pushing
effects. NEC's new low profile/flat lead style "M13" package is
ideal for today's portable wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
0.7±0.05
0.5+ñ00..015
(Bottom View)
0.3
23
1
0.1 0.1 0.2 0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
fT
fT
|S21E|2
|S21E|2
NF
CRE
ICBO
IEBO
hFE
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain2 at VCE = 1 V, IC = 5 mA
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
3. Collector to base capacitance when the emitter is grounded
UNITS
GHz
GHz
dB
dB
dB
pF
nA
nA
NE851M13
2SC5801
M13
MIN TYP MAX
3.0 4.5
5.0 6.5
3.0 4.0
4.5 5.5
– 1.9 2.5
– 0.6 0.8
– – 600
– – 600
100 120 145
California Eastern Laboratories



NE851M13
NE851M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9
VCEO Collector to Emitter Voltage V
5.5
VEBO Emitter to Base Voltage
V
1.5
IC Collector Current
mA 100
PT2 Total Power Dissipation
mW
140
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board.
ORDERING INFORMATION
PART NUMBER QUANTITY
NE851M13-T3-A 10 k pcs./reel
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
160 Mounted on Glass Epoxy PCB
(1.08 cm2 • 1.0mm(t) )
140
120
100
80
60
40
20
0
25 50 75 100 125 150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
80
60
40
20
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage, VBE (V)
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0 123456789
Collector to Base Voltage, VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
400 µA
50
360 µA
320 µA
40 280 µA
240 µA
30 200 µA
160 µA
20
120µ A
10 80 µA
IB = 40 µA
0 1234567
Collector to Emitter Voltage, VCE (V)





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