NE851M13

www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M13 FEATURES NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 0.7±0.05 0.5+0.1 ñ0.05 0.15+0.1 ñ0.05 (Bottom View) 0.3 0.35 2 1.0+0.1 ñ0.05 0.7 LOW PUSHING FACTOR 3 0.35 1 DESCRIPTION NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. 0.15+0.1 ñ0.05 0.1 0.1 0.2 0.2 0.125+0.1 ñ0.05 0.2+0.1 ñ0.05 E7 0.5±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT fT |S21E|2 |S21E|2 NF CRE ICBO IEBO hFE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain2 at VCE = 1 V, IC...