SILICON TRANSISTOR. NE851M03 Datasheet

NE851M03 TRANSISTOR. Datasheet pdf. Equivalent

Part NE851M03
Description NPN SILICON TRANSISTOR
Feature www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M03 FEATURES • NEW MINIATURE M03 PACKAGE: – S.
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Datasheet
Download NE851M03 Datasheet



NE851M03
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NEC's NPN SILICON TRANSISTOR NE851M03
FEATURES
NEW MINIATURE M03 PACKAGE:
– Small transistor outline
– Low profile / 0.59 mm package height
– Flat lead style for better RF performance
IDEAL FOR ≤ 3 GHz OSCILLATORS
LOW 1/f NOISE
LOW PUSHING FACTOR
DESCRIPTION
NEC's NE851M03 transistor is designed for oscillator appli-
cations up to 3 GHz. The NE851M03 features low voltage
operation, low phase noise, and high immunty to pushing ef-
fects. NEC's low profile/flat lead style "M03" package is ideal
for today's portable wireless applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
2
1.4 ±0.1 0.45
(0.9)
0.45
1
0.2+-00.1
1.2±0.05
0.8±0.1
3
0.3
+0.1
-0
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15-+00.0.15
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
fT
fT
|S21E|2
|S21E|2
NF
CRE
ICBO
IEBO
hFE
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz, Zs = Zopt
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain2 at VCE = 1 V, IC = 5 mA
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 μs, duty cycle 2 %.
3. Collector to base capacitance when the emitter is grounded
UNITS
GHz
GHz
dB
dB
dB
pF
nA
nA
NE851M03
2SC5800
M03
MIN TYP MAX
3.0 4.5
5.0 6.5
3.0 4.0
4.5 5.5
– 1.9 2.5
– 0.6 0.8
– – 600
– – 600
100 120 145
California Eastern Laboratories



NE851M03
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9.0
VCEO Collector to Emitter Voltage V
5.5
VEBO Emitter to Base Voltage
V
1.5
IC Collector Current
mA 100
PT2 Total Power Dissipation
mW
200
TJ Junction Temperature
°C 150
TSTG Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm (t) glass epoxy
board.
ORDERING INFORMATION
PART NUMBER QUANTITY
NE851M03-T1-A 3 k pcs./reel
NE851M03
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Mounted on Glass Epoxy PCB
(1.08 cm2 x 1.0 mm(t) )
250
200
150
100
50
0 25 50 75 100 125 150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
80
60
40
20
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage, VBE (V)
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0 12345678
Collector to Base Voltage, VCB (V)
9
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60 400 µA
360 µA
50
320 µA
280 µA
40
240 µA
30 200 µA
160 µA
20
120µ A
10 80 µA
IB = 40 µA
0 1234567
Collector to Emitter Voltage, VCE (V)





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