NE851M03

www.DataSheet4U.com NEC's NPN SILICON TRANSISTOR NE851M03 FEATURES NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS LOW 1/f NOISE LOW PUSHING FACTOR 1.4 ±0.1 0.45 (0.9) OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 80 0.45 1 +0.1 0.2 -0 3 0.3 +0.1 -0 DESCRIPTION NEC's NE851M03 transistor is designed for oscillator applications up to 3 GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's low profile/flat lead style "M03" package is ideal for today's portable wireless applications. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT fT |S21E|2 |S21E|2 NF CRE ICBO IEBO hFE PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz, Zs = Zopt Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 1 V, IC = 5 mA 2 NE851M03 2SC5800 M03 UNITS GHz GHz dB dB dB pF nA nA MIN 3.0 5.0 3.0 4.5 – – – ...