DISTORTION AMPLIFIER. NE856M02 Datasheet

NE856M02 AMPLIFIER. Datasheet pdf. Equivalent

Part NE856M02
Description NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Feature www.DataSheet4U.com NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATUR.
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Total Page 8 Pages
Datasheet
Download NE856M02 Datasheet



NE856M02
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NPN EPITAXIAL SILICON
TRANSISTOR HIGH FREQUENCY NE856M02
LOW DISTORTION AMPLIFIER
FEATURES
• HIGH COLLECTOR CURRENT:
100 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
22 dBm TYP at 1 GHz
• HIGH IP3:
32 dBm TYP at 1 GHz
DESCRIPTION
NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor
designed for medium power applications requiring high dy-
namic range and low intermodulation distortion. This device
offers excellent performance and reliability at low cost through
NEC's titanium, platinum, gold metallization system and direct
nitride passivation of the surface of the chip. The NE856M02
is an excellent choice for low noise amplifiers in the VHF to UHF
band and is suitable for CATV and other telecommunication
applications.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5±0.1
1.6±0.2
1.5±0.1
C
EB E
0.42
±0.06
0.42
±0.06
1.5 0.45
±0.06
3.0
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.25±0.02
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
ICBO
IEBO
hFE2
fT
CRE3
|S21E|2
NF1
NF2
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain at VCE = 10 V, IC = 20 mA
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA
Feed-back Capacitance at VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz
Noise Figure 1 at VCE = 10 V, IC = 7 mA, f = 1 GHz
Noise Figure 2 at VCE = 10 V, IC = 40 mA, f = 1 GHz
µA
µA
GHz
pF
dB
dB
dB
50
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
3.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
NE856M02
2SC5336
M02
TYP
120
6.5
0.5
12.0
1.1
1.8
MAX
1.0
1.0
250
0.8
3.0
California Eastern Laboratories



NE856M02
NE856M02
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
20
VCEO Collector to Emitter Voltage V
12
VEBO Emitter to Base Voltage
V
3.0
IC Collector Current
mA 100
PT Total Power Dissipation2
W
1.2
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Device mounted on 0.7 mm X 16 cm2 double-sided ceramic
substrate (copper plating).
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.0
Ceramic Substrate
16 cm 2 x 0.7 mm
1.0
Free Air
RTH (J-A) 312.5 °CW
0 50 100 150
Ambient Temperature, TA (°C)
ORDERING INFORMATION
PART NUMBER
NE856M02-T1-AZ
QUANTITY
1000
PACKAGING
Tape & Reel
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
f = 1.0 MHz
3.0
2.0
1.0
0.5
0.8
1
35
10 20 30
Collector to Base Voltage, VCB (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 10 V
100
50
20
10
0.5
1 5 10
Collector Current, Ic (mA)
50
INSERTION GAIN vs.
COLLECTOR CURRENT
15
VCE = 10 V
f = 1 GHz
10
5
0
1
35
10 20 30 50 100
Collector Current, IC (mA)





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