Discrete IGBT. QIS4506001 Datasheet

QIS4506001 IGBT. Datasheet pdf. Equivalent

Part QIS4506001
Description Single Discrete IGBT
Feature www.DataSheet4U.com QIS4506001 Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272 www.
Manufacture Powerex Power Semiconductors
Datasheet
Download QIS4506001 Datasheet



QIS4506001
www.DataSheet4U.com
Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272
www.pwrx.com
QIS4506001
Single Discrete IGBT
60 Amperes /4500 Volts
Outline Drawing
Schematic
Description:
Powerex Single Non-Isolated
Discrete is designed specially for
customer high voltage
applications
Features:
„ Low Drive Requirement
„ Low VCE(sat)
„ Molybdenum Mounting Plate
.
Preliminary
Page 1
09/19/2006



QIS4506001
QIS4506001
Powerex, Inc., 173 Pavilion Lane, Youngwood 15697 (724) 925-7272
www.pwrx.com
Single Discrete IGBT
60 Amperes /4500 Volts
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Symbol
QIS4506001
Units
Collector Emitter Voltage
VCES
4500
Volts
Gate Emitter Voltage
VGES
±20
Volts
Collector Current (Continuous)
Peak Collector Current (Pulsed)
IC 60 Amperes
ICM
120*
Amperes
Junction Temperature
Tj -55 to 150
°C
Storage Temperature
Tstg -55 to 125
°C
Mounting Torque, M5 Mounting Screws
- 30 In-lb
Weight (Typical)
- 21 Grams
*Pulse width and repetition rate should be such that device junction temperature does not exceed device rating.
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min. Typ.
Collector Cutoff Current
Gate Leakage Current
ICES
IGES
VCE=VCES VGE=0V
VGE=VGES VCE=0V
-
-
-
-
Gate-Emitter Threshold Voltage
VGE(th)
IC=7mA, VCE=10V
4.5
6.0
Collector-Emitter Saturation Voltage
VCE(sat)
IC=67A, VGE=15V
-
3.0
IC=67A, VGE=15V,
Tj=125°C
-
3.6
Total Gate Charge
QG
VCC=2250V,
- 800
IC=67A, VGS=15V
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Max.
1.0
0.5
7.5
3.9*
-
-
Units
mA
µA
Volts
Volts
Volts
nC
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min. Typ.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn- off Delay Time
Fall Time
Cies
VGE=0V
- 10
Coes
VCE=10V
- .7
Cres
f=1MHz
- .2
td(on)
tr
td(off)
tf
VCC=2250V
IC=67A
VGE1=VGE2=15V
RG=120
-
-
-
-
-
-
-
-
Max.
2.4
2.4
6.0
1.2
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol Test Conditions Min. Typ. Max.
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
RθJC
RθCS
IGBT
IGBT
- 0.05
- TBD
Units
nF
nF
nF
µs
µs
µs
µs
Units
°C/W
°C/W
Preliminary
Page 2
9/19/2006





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