4M SRAM. R1LV0416C-I Datasheet

R1LV0416C-I SRAM. Datasheet pdf. Equivalent

Part R1LV0416C-I
Description Wide Temperature Range Version 4M SRAM
Feature www.DataSheet4U.com R1LV0416C-I Series Wide Temperature Range Version 4M SRAM (256-kword × 16-bit) .
Manufacture Renesas Technology
Total Page 18 Pages
Datasheet
Download R1LV0416C-I Datasheet



R1LV0416C-I
www.DataSheet4U.com
R1LV0416C-I Series
Wide Temperature Range Version
4M SRAM (256-kword × 16-bit)
REJ03C0105-0200Z
Rev. 2.00
May.26.2004
Description
The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0416C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II.
Features
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
Fast access time: 55/70 ns (max)
Power dissipation:
Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
Standby: 1.25 µW (typ) (VCC = 2.5 V)
: 1.5 µW (typ) (VCC = 3.0 V)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
2 chip selection for battery backup
Temperature range: 40 to +85°C
Rev.2.00, May.26.2004, page 1 of 16



R1LV0416C-I
R1LV0416C-I Series
Ordering Information
Type No.
R1LV0416CSB-5SI
R1LV0416CSB-7LI
Access time
55 ns
70 ns
Package
400-mil 44-pin plastic TSOP II (44P3W-H)
Rev.2.00, May.26.2004, page 2 of 16





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