Power Transistor. UF2840P Datasheet

UF2840P Transistor. Datasheet pdf. Equivalent

Part UF2840P
Description RF MOSFET Power Transistor
Feature www.DataSheet4U.com an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancem.
Manufacture Tyco Electronics
Datasheet
Download UF2840P Datasheet



UF2840P
www.DataSheet4U.com
AM=yPFEan comDanv
RF MOSFET Power
100 - 500 MHz
Transistor,
4OW, 28V
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
..
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
UF284OP
Electrical Characteristics at 25°C
i D i 627 i 6.33 1 247 1 257 1
H ] 1.40 1 165 1 055 1 .D65
J 1 292 I 3.M I 115 I 325
input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
C ISS
Coss
C RSS
GP
qD
VSWR-T
* Per Side
Specifications Subject to Change Without Notice.
- ) 45
30
a
10 -
50 -
- 2O:l
pF Vg28.0 V, F=l .O MHz’
pF V,,=28.0 V, F=l .O MHz’
PF V,,=28.0 V, F=l .O MHz’
dB V,,=28.0 V, 1,,=500.0 mA, P,fi40.0 W. F=500 MHz
% V,,=28.0 V, 1,,=500.0 mA, Po,,=40.0 W, F=500 MHz
- V,,=28.0 V, 1,,=500.0 mA, P,,g40.0 W, F=500 MHz
MIA-COM, Inc.



UF2840P
RF MOSFET Power Transistor, 4OW, 28V
Typical Broadband Performance Curves
CAPACITANCES vs VOLTAGE
Fz1.0 MHz
40
10
55
5
C RSS
10 15 20 25 30
"2, (")
U F284OP
v2.00
50
g 4o
f
L 30
2
5 20
E 10
/
0
5
POWER OUTPUT vs VOLTAGE
P,,=3.0 W I,,=500 mA F=500 MHz
10 15 20 25 30
v,, (“)
35
GAIN vs FREQUENCY
v.,,=28 V I,,=500 mA PO,,=40 W
30
EFFICIENCY vs FREQUENCY
V,,=28 V I,,=500 mA P,,,=40 W
65 -
c
J
100 200
3w
400 500
FREQUENCY (MHz)
6
c 55.
kii
50 .
loo
200 3430
FREQUENCY (MHz)
400
500
POWER OUTPUT vs POWER INPUT
VD,=28 V I,,=500 mA
60
1
0.1 0.25
1
2
POWER INPUT (W)
Specifications Subject to Change Without Notice.
M/A-COM, inc.
J
2.5





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