UF2840G

-www.DataSheet4U.com 3== -0-z =z -- 32 -z= .-me--= = * an AMP company RF MOSFET Power 100 - 500 MHz Features l l l l l Transistor, 4OW, 28V UF2840G v2.00 N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device Operation Devices for Broadband High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C Parameter Drain-Source Gate-Source Voltage Voltage Symbol V OS V GS ‘OS P, 1 T, ( Rating 65 20 4’ 116 200 -55 to +150 1.52 I Units V V A w “C “C “C/w 1 F I 6.22 I 6.48 1 a245 I .2X5 I Drain-Source&rent Power Dissipation 1 JunctionTemperature I Storage Temperature Thermal Resistance TST0 8JC 1 K I l.18 I 203 I .070 I x180 I Electrical Characteristics at 25°C * Per Side Specificatms Subject to Change Without Notice. M/A-COM, Inc. RF MOSFET Power Transistor, 4OW, 28V U F2840G v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY V,,=28 V I,,=500 mA P,,,=40 W EFFICIENCY V,,=28 vs FREQUENCY mA P,,,~40 W V I,,=500 25 " 3 6 . $ 0 ii :: 65 . 60 55 - 100 200 300 400 500 100 200 300 400 500 FREQUENCY (MHz) FREQUENCY (%) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=500 mA 0.25 0.5 1 2 2.5 POWER INPUT (W) Specifications Subject to Change Without Notice. M/A-COM, Inc. RF MOSFET Power Transistor, 4OW, 28V U F2840G v2.00 Typical Device Impedance Frequency (MHz) 100 Z,, (OHMS) 6.0 - j 20.0 3.5 -j 11.5 2.5 - j 5.5 1 ( 3.0 + j 0.0 4.0 + j 3.0 V, I,,=500 mA, P,,,=40.0 Wat...