Power Transistor. UF2840G Datasheet

UF2840G Transistor. Datasheet pdf. Equivalent

Part UF2840G
Description RF MOSFET Power Transistor
Feature -www.DataSheet4U.com 3== -0-z =z -- 32 -z= .-me--= = * an AMP company RF MOSFET Power 100 - 500.
Manufacture Tyco Electronics
Total Page 3 Pages
Datasheet
Download UF2840G Datasheet



UF2840G
www.DataSheet4U.co3=m-=-
--
-0-z
=z
32
-z.-m--=--e-
=
* an AMP company
=
RF MOSFET Power
100 - 500 MHz
Transistor,
4OW, 28V
Features
l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
UF2840G
v2.00
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source&rent
Power Dissipation
V OS
V GS
‘OS
P,
65
20
4’
116
V
V
A
w
1 JunctionTemperature
Storage Temperature
Thermal Resistance
1 T, ( 200
TST0
8JC
-55 to +150
1.52
I “C
“C
“C/w
I
Electrical Characteristics at 25°C
1 F I 6.22 I 6.48 1 a245 I .2X5 I
1 K I l.18 I 203 I .070 I x180 I
* Per Side
Specificatms Subject to Change Without Notice.
M/A-COM, Inc.



UF2840G
RF MOSFET Power Transistor, 4OW, 28V
Typical Broadband Performance Curves
GAIN vs FREQUENCY
V,,=28 V I,,=500 mA P,,,=40 W
U F2840G
v2.00
EFFICIENCY vs FREQUENCY
V,,=28 V I,,=500 mA P,,,~40 W
25 65 .
"3
6
$ 60
.0
ii
:: 55 -
100 200 300 400 500
FREQUENCY (MHz)
100 200 300 400 500
FREQUENCY (%)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=500 mA
0.25
0.5
1
POWER INPUT (W)
2 2.5
Specifications Subject to Change Without Notice.
M/A-COM, Inc.





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)