MB84VD23481FJ-70

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50310-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAMTM MB84VD23481FJ-70 s FEATURES Power Supply Voltage of 2.7 V to 3.1 V High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (FCRAM) Operating Temperature −30 °C to +85 °C Package 65-ball FBGA (Continued) s PRODUCT LINE-UP Flash Memory Power Supply Voltage ( V ) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) VCCf* = 2.7 V to 3.1 V 70 70 30 FCRAM VCCr* = 2.7 V to 3.1 V 65 65 40 *: Both VCCf and VCCr must be the same level when either part is being accessed. s PACKAGE 65-ball plastic FBGA (BGA-65P-M01) MB84VD23481FJ-70 (Continued) FLASH MEMORY 0.17 µm Process Technology Simultaneous Read/Write Operations (Dual Bank) FlexBankTM *1 Bank A : 8 Mbit (8 KB × 8 and 64 KB × 15) Bank B : 24 Mbit (64 KB × 48) Bank C : 24 Mbit (64 KB × 48) Bank D : 8 Mbit (8 KB × 8 and 64 KB × 15) Two virtual Banks are chosen from the combination of four physical banks. Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations. Read-while-erase Read-while-program Single 3.0 V Read, Program, and Erase Minimized system level power requirements Minimum 100,000 Program/Erase Cycles Sector Erase Architecture Sixteen 4 Kword and one hundred twenty-six ...