Mobile FCRAMTM. MB84VP23481FK-70 Datasheet

MB84VP23481FK-70 FCRAMTM. Datasheet pdf. Equivalent

Part MB84VP23481FK-70
Description 64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
Feature www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50224-1E Stacked MCP (Multi-Chip Packag.
Manufacture Fujitsu Media Devices
Datasheet
Download MB84VP23481FK-70 Datasheet



MB84VP23481FK-70
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-50224-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64M (×16) Page FLASH MEMORY &
32M (×16) Mobile FCRAMTM
MB84VP23481FK-70
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V
• High Performance
25 ns maximum page read access time, 65 ns maximum random access time (Flash)
20 ns maximum page read access time, 70 ns maximum random access time (FCRAM)
• Operating Temperature
–30 °C to +85 °C
• Package 65-ball FBGA
s PRODUCT LINEUP
(Continued)
Flash
Supply Voltage (V)
Max Random Address Access Time (ns)
VCCf*
=
3.0
V
+0.1V
–0.3 V
65
Max Page Address Access Time (ns)
25
Max CE Access Time (ns)
65
Max OE Access Time (ns)
25
*: Both VCCf and VCCr must be the same level when either part is being accessed.
FCRAM
VCCr*
=
3.0
V
+0.1V
–0.3 V
70
20
70
40
s PACKAGE
65-ball plastic FBGA
(BGA-65P-M01)



MB84VP23481FK-70
MB84VP23481FK-70
(Continued)
— FLASH MEMORY
• Simultaneous Read/Write Operations (Dual Bank)
• FlexBankTM *1
Bank A: 8 Mbit (8 KB ×8 and 64 KB ×15)
Bank B: 24 Mbit (64 KB ×48)
Bank C: 24 Mbit (64 KB ×48)
Bank D: 8 Mbit (8 KB ×8 and 64 KB ×15)
• 8 words Page
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Minimum 100,000 Program/Erase Cycles
• Sector Erase Architecture
Eight 8 Kbytes, a hundred twenty-six 64 Kbytes, eight 8 Kbytes sectors.
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Dual Boot Block
Sixteen to 8Kbytes boot block sectors, eight at the top of the address range and eight at the bottom of the
address range
• HiddenROM Region
256 byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
At VIL, allows protection of “outermost” 2×4 K words on both ends of boot sectors, regardless of sector pro-
tection/unprotection status
At VIH, allows removal of boot sector protection
At VACC, increases program performance
• Embedded EraseTM *2 Algorithms
Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for Detection of Program or Erase Cycle Completion
• Ready/Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode
When addresses remain stable, the device automatically switches itself to low power mode
• Program Suspend/Resume
Suspends the program operation to allow a read in another byte
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• New Sector Protection
Persistent Sector Protection
Password Sector Protection
• Please refer to “MBM29QM64DF” Datasheet in Detailed Function
(Continued)
2





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