MBM29DL34BF

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20908-2E FLASH MEMORY CMOS 32 M (4 M × 8/2 M × 16) BIT Dual Operation MBM29DL34TF/BF 70 s DESCRIPTION The MBM29DL34TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. Power Supply Voltage (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MBM29DL34TF/BF 70 2.7 V to 3.6 V 70 70 30 s PACKAGES 48-pin plastic TSOP (1) Marking side 48-ball plastic FBGA (FPT-48P-M19) (BGA-48P-M12) MBM29DL34TF/BF70 ) (Continued) MBM29DL34TF/BF are organized into two physical banks; Bank 1 and Bank 2, which can be considered to be two separate memory arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. In the device, a design concept called Sliding Bank Architecture is implemented. Using this concept the device can execute simultaneous operation between Bank 1 and Bank 2(Refer to “1...