8 BIT. MBM29F004BC Datasheet

MBM29F004BC BIT. Datasheet pdf. Equivalent

Part MBM29F004BC
Description FLASH MEMORY CMOS 4M (512K x 8) BIT
Feature www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-3E FLASH MEMORY CMOS 4 M (512 K .
Manufacture Fujitsu Media Devices
Total Page 30 Pages
Datasheet
Download MBM29F004BC Datasheet



MBM29F004BC
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20876-3E
FLASH MEMORY
CMOS
4 M (512 K × 8) BIT
MBM29F004TC/004BC-70/-90
s DESCRIPTION
The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The
MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed
to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for write or
erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F004TC/BC offers access times between 70 ns and 90 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE) , write
enable (WE) , and output enable (OE) controls.
The MBM29F004TC/BC is pin and command set compatible with JEDEC standard E2PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 12.0 V Flash or EPROM devices.
(Continued)
s PRODUCT LINE UP
Part No.
Ambient Temperature ( °C)
Max Address Access Time (ns)
VCC Supply Voltage
Operation
Voltage Consumption Erase/Program
(mW) (Max) TTL Standby mode
CMOS Standby mode
Max CE Access (ns)
Max OE Access (ns)
MBM29F004TC/BC
-70 -90
20 to + 70
40 to + 85
70 90
5.0 V ± 10%
193
275
5.5
0.0275
70 90
30 35



MBM29F004BC
MBM29F004TC/004BC-70/90
(Continued)
The MBM29F004TC/BC is programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase
is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm
which is an internal algorithm that automatically preprograms the array if it is not already programmed before
executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies
proper cell margin. Any individual sector is typically erased and verified within 1.0 second (if already completely
preprogrammed) .
This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to
be erased and reprogrammed without affecting other sectors. The MBM29F004TC/BC is erased when shipped
from the factory.
The MBM29F004TC/BC device also features hardware sector group protection. This feature will disable both
program and erase operations in any combination of sectors of memory. This can be achieved in-system or via
programming equipment.
Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of
time to read data from or program data to a non-busy sector. True background erase can thus be achieved.
The device features single 5.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of
DQ7, or by the Toggle Bit I feature on DQ6 output pin. Once the end of a program or erase cycle has been
completed, the device internally resets to the read mode.
Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29F004TC/BC memory electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using
the EPROM programming mechanism of hot electron injection.
s PACKAGE
32-pin plastic TSOP (1)
Marking Side
32-pin plastic TSOP (1)
32-pin plastic QFJ (PLCC)
(FPT-32P-M24)
Marking Side
(FPT-32P-M25)
(LCC-32P-M02)
2





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