MBM29F004TC

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-3E FLASH MEMORY CMOS 4 M (512 K × 8) BIT MBM29F004TC/004BC-70/-90 s DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard MBM29F004TC/BC offers access times between 70 ns and 90 ns allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE) , write enable (WE) , and output enable (OE) controls. The MBM29F004TC/BC is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices. (Continued) s PRODUCT LINE UP Part No. Ambient Temperature ( °C) Max Address Access Time (ns) VCC Supply Voltage Operation Erase/Program Voltage Consumption (mW) (Max) TTL Standby mode CMOS Standby mode M...