MBM29PL32TM

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20907-3E FLASH MEMORY CMOS 32 M (4M × 8/2M × 16) BIT MirrorFlashTM* MBM29PL32TM/BM 90/10 s DESCRIPTION The MBM29PL32TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29PL32TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. (Continued) s PRODUCT LINE UP Part No. VCC Max Address Access Time Max CE Access Time Max Page Read Access Time MBM29PL32TM/BM 90 3.0 V to 3.6 V 90 ns 90 ns 25 ns 10 3.0 V to 3.6 V 100 ns 100 ns 30 ns s PACKAGES 48-pin plastic TSOP (1) 48-ball plastic FBGA (FPT-48P-M19) * : MirrorFlashTM is a trademark of Fujitsu Limited. (BGA-48P-M20) Notes : Programming in byte mode ( × 8) is prohibited. Programming to the address that already contains data is prohibited. (It is mandatory to erase data prior to overprogram on the same address.) MBM29PL32TM/BM90/10 (Continued) The standard MBM29PL32TM/BM offers access times of 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29PL32TM/BM supports command set compatible with JEDEC single-power-supply EEPROMS standard...