DWEPxx-xx

www.DataSheet4U.com Contents Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design Page 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE(sat) B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types E-Series, Improved NPT³ technology 600 ...1200 V 600 V 600 V 1200 ... 1700 V IC 7 ... 20 A 7 ... 20 A 10 ... 20 A 20 ... 150 A 6 6 6 7 MOSFET Chips VDSS HiPerFET Power MOSFET PolarHTTM MOSFET, very Low RDS(on) P-Channel Power MOSFET N-Channel Depletion Mode MOSFET Layouts TM RDS(on) 0.005 ... 4.5 Ω 0.015 ... 0.135 Ω 0.06 ... 1.2 Ω 30 ... 110 Ω 8-10 11 12 12 13-17 70 ...1200 V 55 ... 300 V -100 ...-600 V 500 ...1000 V Bipolar Chips VRRM / VDRM Rectifier Diodes FREDs Low Leakage FREDs SONIC-FRDTM Diodes GaAs Schottky Diodes Schottky Diodes Phase Control Thyristors Fast Rectifier Diodes 1200 ... 1800 V 600 ... 1200 V 200 ... 1200 V 600 ... 1800 V 100 ... 600 V 8 ... 200 V 800 ... 2200 V 1600 ... 1800 V IF(AV)M / IT(AV)M 12 ... 416 A 8 ... 244 A 9 ... 148 A 12 ... 150 A 3.5 ... 25 A 28 ... 145 A 15 ... 540 A 10 ... 26 A 18-19 20-21 22-23 24-25 26-27 28-31 32-33 34 Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates What is DCB/DAB? DCB Specification 35 36 IXYS reserves the right to change limits, test conditions and dimensions 1 www.DataSheet4U.com Symbols and Definitions Cies Ciss -di/dt IC ID IF IF(AV)M IFSM IGT IR IRM IT IT(AV)M ITSM RDS(on) Rthjc rT Tcase T...