NESG2030M04

www.DataSheet4U.com NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M04 DESCRIPTION NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 μA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 0.5 V, IC = 0 DC Current Gain2 at VCE = 2 V, IC = 5 mA Reverse Transfer Capacitance3 at VCB = 2 V, IE = 0 mA, f = 1 GHz Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC ...