SP8M24

www.DataSheet4U.com SP8M24 Transistors 4V Drive Nch+Pch MOS FET SP8M24 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions (Unit : mm) SOP8 5.0 0.4 (8) (5) 1.75 1pin mark 1.27 0.2 Each lead has same dimensions zApplications Switching zPackaging specifications Package Type SP8M24 Code Basic ordering unit (pieces) Taping TB 2500 ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain zInner circuit (8) (7) (6) (5) ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD protection diode ∗2 Body diode zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Tr1 : N-ch Tr2 : P-ch 45 −45 20 −20 ±4.5 ±3.5 ±18 ±14 1.0 −1.0 18 −14 2.0 1.4 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C 0.4Min. zFeatures 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). (1) (4) 3.9 6.0 1/3 SP8M24 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − 45 − 1.0 − − − 3.5 − − − − − − − − − − Typ. − − − − 33 41 46 − 550 140 70 12 18 42 12 6.8 2.0 2.9 Max. 10 − 1 2.5 46 57 64 − − − − − − − − 9.6 − − IGSS Gate-source leakage Drain-source breakdown vo...