UPA814T

www.DataSheet4U.com NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 9 GHz HIGH COLLECTOR CURRENT: 100 mA 0.65 2.0 ± 0.2 1.3 2 1 UPA814T OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 2.1 ± 0.1 1.25 ± 0.1 6 0.2 (All Leads) 5 DESCRIPTION NEC's UPA814T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 3 4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 9 6 2 100 110 200 150 -65 to +150 0.9 ± 0.1 0.7 0.15 - 0.05 0 ~ 0.1 +0.10 TJ TSTG Note: 1.Operation in excess of any one of these parameters may result in permanent damage. PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICB...