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HiPerFASTTM IGBT
ISOPLUS247TM
IXGR 24N60C
(Electrically Isolated Back Surface)
VCES IC25 VCE(sat) tfi(typ)
= 600 V = 42 A = 2.5 V = 60 ns
Preliminary data sheet
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 42 22 80 ICM = 48 @ 0.8 VCES 80 -40 ... +150 150 -40 ... +150 300 2500 5 V V V V A A A A W °C °C °C °C V g
ISOPLUS 247 E153432
G
C
E
Isolated Backside*
G = Gate, E = Emitter
C = Collector
* Patent pending
Features
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS, t = 1minute leads-to-tab
DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 150°C 5.0 200 1 ±100 2.1 2.5 V V µA mA nA V Advantages
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BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers
VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC
= IT, VGE = 15 V (see note 1)
Easy assembly High power density Very fast switching speeds for high frequency applications
© 2002 IXYS All rights reserved
98706 (02/02)
IXGR 24N60C
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 9 17 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 120 40 55 IC = IT, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C IC = IT, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 18 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IT, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 18 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 13 17 15 25 75 60 0.24 15 12 0.15 130 110 0.6 140 110 0.36 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 1.57 K/W 0.15 K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
ISOPLUS 247 OUTLINE
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IT; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Note:
1. IT = 24A
IXYS res.