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IXGR32N60CD1

IXYS Corporation

HiPerFAST IGBT

www.DataSheet4U.com HiPerFASTTM IGBT with Diode ISOPLUS247TM (Electrically Isolated Backside) IXGR 32N60CD1 VCES IC25...


IXYS Corporation

IXGR32N60CD1

File Download Download IXGR32N60CD1 Datasheet


Description
www.DataSheet4U.com HiPerFASTTM IGBT with Diode ISOPLUS247TM (Electrically Isolated Backside) IXGR 32N60CD1 VCES IC25 VCE(SAT) tfi(typ) = 600 V = 45 A = 2.7 V = 55 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS t = 1 min leads-to housing Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 45 28 120 ICM = 64 @ 0.8 VCES 140 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A W °C °C °C °C V~ g Features z z z z z ISOPLUS 247TM (IXGR) E 153432 G C E Isolated backside* G = Gate, E = Emitter, C = Collector, TAB = Collector * Patent pending DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ± 100 2.3 2.7 V µA mA nA V z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE z z VCE = 600V VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IT, VGE = 15 V Note 1 Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and r...




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