HiPerFAST IGBT
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HiPerFASTTM IGBT with Diode ISOPLUS247TM
(Electrically Isolated Backside)
IXGR 32N60CD1
VCES IC25...
Description
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HiPerFASTTM IGBT with Diode ISOPLUS247TM
(Electrically Isolated Backside)
IXGR 32N60CD1
VCES IC25
VCE(SAT) tfi(typ)
= 600 V = 45 A = 2.7 V = 55 ns
Preliminary data sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS t = 1 min leads-to housing Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 45 28 120 ICM = 64 @ 0.8 VCES 140 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A W °C °C °C °C V~ g Features
z z z z z
ISOPLUS 247TM (IXGR) E 153432
G
C
E
Isolated backside*
G = Gate, E = Emitter,
C = Collector, TAB = Collector
* Patent pending
DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 125°C 5.0 200 3 ± 100 2.3 2.7 V µA mA nA V
z z
z
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE
z z
VCE = 600V VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IT, VGE = 15 V Note 1
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