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PRELIMINARY
VTM V•I Chip – VTM Voltage Transformation Module
TM
V048K120T025
K indicates BGA configuration. For other mounting options see Part Numbering below.
• 48 V to 12 V V•I Chip Converter • 25 A (37.5 A for 1 ms) • High density – 1200 W/in3 • Small footprint – 280 W/in2 • Low weight – 0.5 oz (14 g) • Pick & Place / SMD
• 125°C operation • 1 µs transient response • 3.5 million hours MTBF • Typical efficiency 96% • No output filtering required • Surface mount BGA or J-Lead packages Vf = 26 - 55 V VOUT = 6.5 - 13.7 V IOUT = 25 A K = 1/4 ROUT = 13.9 mΩ max
©
Actual size
Product Description
The V048K120T025 V•I Chip Voltage Transformation Module (VTM) breaks records for speed, density and efficiency to meet the demands of advanced DSP, FPGA, and ASIC at the point of load (POL) while providing isolation from input to output. It achieves a response time of less than 1 µs and delivers up to 25 A in a volume of less than 0.25 in3 with unprecedented efficiency. It may be paralleled to deliver hundreds of amps at an output voltage settable from 6.5 to 13.7 Vdc. The VTM V048K120T025’s nominal output voltage is 12 Vdc from a 48 Vdc input Factorized Bus, Vf, and is controllable from 6.5 to 13.7 Vdc at no load, and from 6.5 to 13.4 Vdc at full load, over a Vf input range of 26 to 55 Vdc. It can be operated either open- or closedloop depending on the output regulation needs of the application. Operating open-loop, the output voltage tracks its Vf input voltage with a transformation ratio, K = 1/4 , for applications requiring a programmable output voltage at high current and high efficiency. Closing the loop back to an input Pre-Regulation Module (PRM) or DC-DC converter enables tight load regulation. The 12 V VTM achieves break-through power density of 1200 W/in3 in a V•I Chip package compatible with standard pick-and-place and surface mount assembly processes. The V•I Chip BGA package supports in-board mounting with a low profile of 0.16" (4 mm) over the board. A J-lead package option supports on-board surface mounting with a profile of only 0.25" (6 mm) over the board. The VTM’s fast dynamic response and low noise eliminate the need for bulk capacitance at the load, substantially increasing the POL density while improving reliability and decreasing cost.
Absolute Maximum Ratings
Parameter
+In to -In +In to -In PC to -In VC to -In +Out to -Out Isolation voltage Output current Peak output current Output power Peak output power Case temperature Operating junction temperature (1) Storage temperature
Values
-1.0 to 60 100 -0.3 to 7.0 -0.3 to 19.0 -0.1 to 30.0 2,250 25 37.5 300 450 208 -40 to 125 -55 to 125 -40 to 150 -65 to 150
Unit
Vdc Vdc Vdc Vdc Vdc Vdc A A W W °C °C °C °C °C
Notes
For 100 ms
Input to Output Continuous For 1 ms Continuous For 1 ms During reflow T - Grade M - Grade T - Grade M - Grade
Note:
(1) The referenced junction is defined as the semiconductor having the highest temperature. This temperature is monitored by a shutdown comparator.
Part Numbering
V
Voltage Transformation Module
048
Input Voltage Designator
K
120
Output Voltage Designator (=VOUT x10)
T
025
Output Current Designator (=IOUT)
Configuration Options F = On-board (Figure 15) K = In-board (Figure 14)
Product Grade Temperatures (°C) Grade Storage Operating T -40 to150 -40 to125 M -65 to150 -55 to125
vicorpower.com
800-735-6200
V•I Chip Voltage Transformation Module
V048K120T025
Rev. 1.0
Page 1 of 16
PRELIMINARY
Electrical Specifications Input Specs (Conditions are at 48 Vin, full load, and 25°C ambient unless otherwise specified)
Parameter
Input voltage range Input dV/dt Input overvoltage turn-on Input overvoltage turn-off Input current Input reflected ripple current No load power dissipation Internal input capacitance Internal input inductance 170 4.7 4 20 5.7 55 59 6.8
V•I Chip Voltage Transformation Module
Min
26
Typ
48
Max
55 1
Unit
Vdc V/µs Vdc Vdc Adc mA p-p W µF nH
Note
Operable down to zero V with VC voltage applied
Using test circuit in Figure 16; See Figure 1
Output Specs (Conditions are at 48 Vin, full load, and 25°C ambient unless otherwise specified)
Parameter
Output voltage Rated DC current Peak repetitive current DC current limit Current share accuracy Efficiency Half load Full load Internal output inductance Internal output capacitance Load capacitance Output overvoltage setpoint Output ripple voltage No external bypass 10 µF bypass capacitor Effective switching frequency Line regulation K Load regulation ROUT Transient response Voltage overshoot Response time Recovery time 355 200 1 mV ns µs 25 A load step with 100 µF CIN; See Figures 7 and 8 See Figures 7 and 8 See Figures 7 and 8 11.7 13.9 mΩ See Figure 19 0.2475 1/4 0.2525 VOUT = K•VIN at no load 2.5 144 12.8 2.8 3.2 214 mV mV MHz See Figures 2 and 5 See Figure 6 Fixed, 1.4 MHz per phase 13.8 95.0 95.0 95.5 96.0 1.1 55 1,000 % % nH µF µF Vdc Effective value See Figure 3 See Figure 3 25.5 30.0 5
Min
9.5 9.2 0
Typ.