MEDIUM POWER PHEMT • FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Po...
MEDIUM POWER PHEMT FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency
DRAIN BOND PAD SOURCE BOND PAD (2x)
LP6836
GATE BOND PAD
DESCRIPTION AND APPLICATIONS
DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm)
The LP6836 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 360 µ m
Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LP6836 also features Si3 N4 passivation and is available in P70 and SOT343 package types. Typical applications include high dynamic range driver stages for commercial applications including wireless infrastructure systems and broad bandwidth amplifiers. ELECTRICAL SPECIFICATIONS @ TAmbient = 25 ° C
Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Gate-Drain Breakdown Voltage Magnitude Thermal Resistivity frequency=18 GHz Symbol IDSS P-1dB G-1dB PAE IMAX GM IGSO VP |VBDGS| |VBDGD| ΘJC Test Conditions VDS = 2 V; VGS = 0 V VDS = 8 V; IDS = 50%...
