LP6836P70

PACKAGED MEDIUM POWER PHEMT FEATURES ♦ 23 dBm Output Power at 1-dB Compression at 15 GHz ♦ 11.5 dB Power Gain at 15 GHz ♦ 50% Power-Added Efficiency LP6836P70 DESCRIPTION AND APPLICATIONS The LP6836P70 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic range. It utilizes a 0.25 µ m x 360 µ m Schottky barrier gate, defined by electron-beam photolithography. Typical applications include pre-drivers in commercial wireless infrastructure and radio link highperformance power amplifiers. ELECTRICAL SPECIFICATIONS @ TAmbient = 25 ° C* Parameter Saturated Drain-Source Current** Power at 1-dB Compression Power Gain at 1-dB Compression Power-Added Efficiency Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Symbol IDSS P-1dB G-1dB PAE IMAX GM IGSO VP |VBDGS| Test Conditions VDS = 2 V; VGS = 0 V VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS; PIN = 20 dBm VDS = 2 V; VGS = 1 V VDS = 2 V; VGS = 0 V VGS = -5 V VDS = 2 V; IDS = 2 mA IGS = mA -0.25 -11 70 Min 80 22 10.5 23 12 50 190 95 1 -0.8 -15 15 -2.0 Typ Max 125 Units mA dBm dB % mA mS µA V V Gate-Drain Breakdown |VBDGD| IGD = 2 mA -12 -16 V Voltage Magnitude *frequency=15 GHz, unless otherwise noted **Formerly binned as: LP6836P70-1 = 80-95 mA, LP6836P70–2 = 96-105 mA, and LP6836P70-3 = 106-125 mA P...