2SB1197

www.DataSheet4U.com MCC Micro Commercial Components TM
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R PNP Silicon Epitaxial Transistors Features Small Package Mounting:any position ROHS Compliant x Case Material: Molded Plastic. Classification Rating 94V-0 UL Flammability SOT-23 Maximum Ratings @ Ta = 25ć(unless otherwise noted) A Symbol IC PD TJ TSTG Parameter Collector Current Total Device Dissipation Junction Temperature Storage Temperature Range Value -0.8 0.2 150 -55 to +150 Unit A W к к F E D C C B B E Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO Parameter Collector-Emitter Breakdown Voltage (IC=-1mAdc,IB=0) Collector-Base Breakdown Voltage (IC=-50uAdc,IE=0) Collector-Base Breakdown Voltage (IE=-50uAdc,IC=0) Collector-Base Cutoff Current (VCB=-20Vdc, IE=0) Emitter-Base Cutoff Current (VEB=-4.0Vdc, IC=0) DC Current Gain (IC=-100mAdc, VCE=-3.0Vdc) Collector-Emitter Saturation Voltage (IC=-500mAdc, IB=-50mAdc) Transition Frequency (VCE=-5Vdc,IC=-50mAdc,f=100MHZ) P 82-180 AHP Q 120-270 AHQ Min -32 -40 -5.0 Max Units G H J V K V V -0.5 -0.5 µAdc uAdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 DIMENSIONS MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 ICBO IEBO ON CHARACTERISTICS hFE VCE(sat) 82 390 -0.5 Vdc MHZ MA...