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Bulletin I27235 07/06
GA200SA60SP
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard : Optimize...
www.DataSheet4U.com
Bulletin I27235 07/06
GA200SA60SP
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz Lowest conduction losses available Fully isolated package ( 2,500 volt AC) Very low internal inductance ( 5 nH typ.) Industry standard outline UL pending Totally Lead-Free
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 100A
n-channel
Benefits
Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages
SOT-227
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current c Clamped Inductive Load Current d Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy e RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw
Max.
600 200 100 400 400 ± 20 155 2500 630 250 -55 to + 150 -55 to + 150 12 lbf in(1.3Nm)
Units
V A
V mJ V W
°C
Thermal Resistance
Parameter
RθJC RθCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight of Module
Typ.
––– 0.05 30
Max.
0.2...