(KBU600-G - KBU610-G) Silicon Bridge Rectifiers
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Silicon Bridge Rectifiers
KBU600-G thru 610-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts Forwar...
Description
www.DataSheet4U.com
Silicon Bridge Rectifiers
KBU600-G thru 610-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts Forward Current: 6.0 Amp Features:
Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards J G H M K L
_ _ _ +
A B
C D KBU Max Dim Min 22.7 23.70 A 4.10 B 3.80 4.20 4.70 C 1.70 2.20 D E 10.30 11.30 4.50 6.80 G 5.60 H 4.60 J 25.40 19.30 K L 16.80 17.80 6.60 7.10 M 5.20 N 4.70 1.20 1.30 P All Dimensions in mm
E
Mechanical Data:
Case: Molded Plastic Terminals: Plated Leads Solderable per MIL STD-202, Method 208 Weight: 1.7 grams (approx.) Mounting Position: Any Marking: Type Number
N P
CHARACTERISTICS
Symbol 600-G 601-G 602-G 604-G 606-G 608-G 610-G VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t RθJC Tj TSTG
35 70 140 280 6.0 420 560 700 50 100 200 400 600 800 1000
KBU
KBU
KBU
KBU
KBU
KBU
KBU
UNIT
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TA = 100ºC Non-Repetitive Peak Forward Surge Current 8.3ms Single half Sine-Wave Superimposed on rated load (JEDEC Method) Forward Voltage (per element) @ IF=3.0A Peak Reverse Current At Rated DC Blocking Voltage @TC=25ºC @TC=100ºC
V
V A
250 1.0 10 1.0 166 4.2 -65 to +150
A V uA mA A2S K/W ºC
Rating for Fusing (t<8.3ms) (Note1) Typical Thermal Resistance (Note2) Operating and Storage Temperature Range
Note: 1. Non-repetitive for t>1ms an...
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