Document
www.DataSheet4U.com
General Purpose Transistor
SMD Diodes Specialist
MMBT2907A-G (PNP)
RoHS Device
Features
-Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. -Useful dynamic range exceeds to 600mA As a switch and to 100MHz as an amplifier.
0.044 (1.10) 0.035 (0.90) 0.056 (1.40) 0.047 (1.20)
SOT-23
0.119 (3.00) 0.110 (2.80)
3
1
0.083 (2.10) 0.066 (1.70)
2
0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20)
Collector 3
0.020 (0.50) 0.013 (0.35)
0.006 (0.15) max 0.007 (0.20) min
1 Base
2 Emitter
Dimensions in inches and (millimeter)
Maximum Ratings(at T A =25 C unless otherwise noted)
Parameter
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Tot al de vice di ssipa tioi n Th er mal res istan ce jun ction to ambi en t St or ag e tempe rat ur e an d jun ction tempe rat ur e
O
Symbol
V CBO V CEO V EBO IC PD R
JA
Min
Typ
Max
-60 -60 -5 -0.6 0. 35 35 7
Unit
V V V A W
o
C/ W
o
T STG , T J
-55
+1 50
C
REV:A
QW-BTR03
Page 1
General Purpose Transistor
SMD Diodes Specialist
Electrical Characteristics (at T A =25 C unless otherwise noted)
Parameter
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Base cut-off current Collector cut-off current DC current gain
O
Conditions
I C =10μA , I E =0 I C =10mA , I B =0 I E =10μA , I C =0 V CB =-50V , I E =0 V CE =-30V , V EB =-0.5V V CE =-30V , V BE =-0.5V V CE =-10V , I C =-0.1mA V CE =-10V , I C =-1mA V CE =-10V , I C =-10mA V CE =-10V , I C =-150mA V CE =-10V , I C =-500mA
Symbol
V CBO V CEO* V EBO I CBO IB I CEX h FE(1)* h FE(2)* h FE(3)* h FE(4)* h FE(5)* V CE(SAT)* V CE(SAT)* V BE(SAT)* V BE(SAT)*
Min
-60 -60 -5
Max
Unit
V V V
-20 -50 -50 75 100 100 100 300
nA nA nA
50 -0.4 -1.6 -1.3 -2.6 V V V V
Collector-Emitter saturation voltage
I C =-150mA , I B =-15mA I C =-500mA , I B =-50mA
Base-Emitter saturation voltage
I C =-150mA , I B =-15mA I C =-500mA , I B =-50mA V CE =-20V , IC=-50mA
Transition frequency F=100MHz Delay time Rise time Storage time Fall time * Pulse test: tp≤300µS, δ ≤0.02 V CE =-30V , I C =-150mA I B1 =I B2 =-15mA V CE =-6V , I C =-150mA I B1 =I B2 =-15mA
fT
200
Mhz
td tr ts tf
10 40 80 30
nS nS nS nS
REV:A
QW-BTR03
Page 2
General Purpose Transistor
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (MMBT2907A-G)
Fig.1 Typical pulsed current gain V.S. Collector current
V CE(SAT) , Collector Emitter voltage (V)
500 0.5
Fig.2 Collector-Emitter saturatioin voltage V.S. Collector current
ß=10
h F E - Ty p i ca l p ulsed cu r r e n t gain
V CE =5V
400
125 oC
0.4
300
25 C
o
0.3
25 C
o
200
0.2
100
-40 oC
0.1
125 C -40 oC
o
0 0.1
0 1 10 100 500
1
10
100
500
Ic-Collector current (mA)
Ic- Collector current (mA)
V BE(ON ) , Base-Emitter O N voltage (V )
Fig. 3 Base-Emitter saturation Voltage V.S. Collector current
V BE ( SAT) Bas e -Em i tter v o l t.