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MMBT2907A-G Dataheets PDF



Part Number MMBT2907A-G
Manufacturers Comchip Technology
Logo Comchip Technology
Description GENERAL PURPOSE TRANSISTORS
Datasheet MMBT2907A-G DatasheetMMBT2907A-G Datasheet (PDF)

www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMBT2907A-G (PNP) RoHS Device Features -Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. -Useful dynamic range exceeds to 600mA As a switch and to 100MHz as an amplifier. 0.044 (1.10) 0.035 (0.90) 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 0.066 (1.70) 2 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 0.020 (0.50) 0.013 (.

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www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMBT2907A-G (PNP) RoHS Device Features -Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. -Useful dynamic range exceeds to 600mA As a switch and to 100MHz as an amplifier. 0.044 (1.10) 0.035 (0.90) 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 0.066 (1.70) 2 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 0.020 (0.50) 0.013 (0.35) 0.006 (0.15) max 0.007 (0.20) min 1 Base 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings(at T A =25 C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Tot al de vice di ssipa tioi n Th er mal res istan ce jun ction to ambi en t St or ag e tempe rat ur e an d jun ction tempe rat ur e O Symbol V CBO V CEO V EBO IC PD R JA Min Typ Max -60 -60 -5 -0.6 0. 35 35 7 Unit V V V A W o C/ W o T STG , T J -55 +1 50 C REV:A QW-BTR03 Page 1 General Purpose Transistor SMD Diodes Specialist Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Base cut-off current Collector cut-off current DC current gain O Conditions I C =10μA , I E =0 I C =10mA , I B =0 I E =10μA , I C =0 V CB =-50V , I E =0 V CE =-30V , V EB =-0.5V V CE =-30V , V BE =-0.5V V CE =-10V , I C =-0.1mA V CE =-10V , I C =-1mA V CE =-10V , I C =-10mA V CE =-10V , I C =-150mA V CE =-10V , I C =-500mA Symbol V CBO V CEO* V EBO I CBO IB I CEX h FE(1)* h FE(2)* h FE(3)* h FE(4)* h FE(5)* V CE(SAT)* V CE(SAT)* V BE(SAT)* V BE(SAT)* Min -60 -60 -5 Max Unit V V V -20 -50 -50 75 100 100 100 300 nA nA nA 50 -0.4 -1.6 -1.3 -2.6 V V V V Collector-Emitter saturation voltage I C =-150mA , I B =-15mA I C =-500mA , I B =-50mA Base-Emitter saturation voltage I C =-150mA , I B =-15mA I C =-500mA , I B =-50mA V CE =-20V , IC=-50mA Transition frequency F=100MHz Delay time Rise time Storage time Fall time * Pulse test: tp≤300µS, δ ≤0.02 V CE =-30V , I C =-150mA I B1 =I B2 =-15mA V CE =-6V , I C =-150mA I B1 =I B2 =-15mA fT 200 Mhz td tr ts tf 10 40 80 30 nS nS nS nS REV:A QW-BTR03 Page 2 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMBT2907A-G) Fig.1 Typical pulsed current gain V.S. Collector current V CE(SAT) , Collector Emitter voltage (V) 500 0.5 Fig.2 Collector-Emitter saturatioin voltage V.S. Collector current ß=10 h F E - Ty p i ca l p ulsed cu r r e n t gain V CE =5V 400 125 oC 0.4 300 25 C o 0.3 25 C o 200 0.2 100 -40 oC 0.1 125 C -40 oC o 0 0.1 0 1 10 100 500 1 10 100 500 Ic-Collector current (mA) Ic- Collector current (mA) V BE(ON ) , Base-Emitter O N voltage (V ) Fig. 3 Base-Emitter saturation Voltage V.S. Collector current V BE ( SAT) Bas e -Em i tter v o l t.


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