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General Purpose Transistor
SMD Diodes Specialist
MMST2222A-G (NPN)
RoHS Device
Features
-Power dissipation P CM : 0.2W (T A =25 OC) -Collector current I CM : 0.6A -Collector-base voltage V (BR)CBO : 75V -Operating and storage junction temperature range T J , T STG : -55 OC to +150 OC
SOT-323
0.087 (2.20) 0.070 (1.8)
3
0.054 (1.35) 0.045 (1.15)
1
0.056 (1.40) 0.047 (1.20) 0.044 (1.10) 0.035 (0.90)
2
0.006 (0.15) 0.002 (0.05) 0.087 (2.20) 0.078 (2.00)
Marking: K3P
Collector 3
0.004 (0.10) max 0.016 (0.40) 0.008 (0.20) 0.004 (0.10) min
1 Base
Dimensions in inches and (millimeter)
2 Emitter
Electrical Characteristics (at TA=25 C unless otherwise noted)
Parameter
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain V CE =10V , I C =1mA Collector-Emitter saturation voltage Base-Emitter saturation voltage I C =500mA , I B =50mA I C =500mA , I B =50mA V CE =20V , I C =20mA f=100MH Z h FE(2) V CE (sat) V BE (sat)
O
Conditions
I C =10μA , I E =0 I C =10mA , I B =0 I E =10μA , I C =0 V CB =70V , I E =0 V CE =35V , I B =0 V EB =3V , I C =0 V CE =10V , I C =150mA
Symbol
V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CEO I EBO h FE(1)
Min
75 40 6
Max
Unit
V V V
0.1 0.1 0.1 100 50 0.6 1.2 300
µA µA µA
V V
Transition frequency
fT
300
MH Z
Output capacitance
V CB =10V , I E =0 f=1MH Z
C ob
8
pF
Delay time Rise time Storage time Fall time
V CC =30V , I C =150mA V BE(off) =0.5V , I B1 =15mA
td tr ts tf
10 25 225 60
nS nS nS nS
REV:A
V CC =30V , I C =150mA I B1 =I B2 =15mA
QW-BTR06
Page 1
General Purpose Transistor
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
Fig.1 Grounded Emitter Output Characteristics
100
T A =25 OC 600
Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current
I C, Collector Current (mA)
V CE(SAT), Collector-Emitter Saturation Voltage (V)
500 400
0.3
0.2
50
300 200 100 I B =0 μ A
0.1
T A =25 OC I C /I B =10
0 0 5 10
0 1 10 100
1000
V CE , Collector-Emitter Voltage (V)
I C , Collector Current (mA)
Fig.3 DC Current Gain vs. Collector Current
1000
T A =25 C
O
Fig.4 DC Current Gain vs. Collector Current
1000
V CE =10V
h FE, DC Current Gain
h FE, DC Current Gain
T A =125 OC 25 C -55 C
O O
V CE =10V
100
100
V CE =1V
10 0.1 1.0 10 100 1000
10 0.1 1.0 10 100 1000
I C , Collector Current (mA)
I C , Collector Current (mA)
1000
T A =25 OC V CE =10V f=1KHz
V BE(SAT), Base-Emitter Saturation Voltage (V)
Fig.5 AC Current gain vs. Collector Current
Fig.6 Base-Emitter Saturation Voltage vs. Collector Current
1.8 1.6
T A =25 C I C /I B =10
O
h FE, AC Current Gain
1.2
100
0.8
0.4
10 0.1 1.0 10 100 1000
0 1.0
10
100
1000
I C , Collector Current (mA)
I C , Collector Current (mA)
REV:A
QW-BTR06
Page 2
General Purpose Transistor
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
Fig.7 Grounded-Emitter Propagation Characteristics
V BE(on), Base-Emitter Voltage (V)
1.8 1.6 1000
T A =25 C V CE =10V
O
Fig.8 Turn-on time vs. Collector Current
1.2
t on, Turn-on Time (nS)
T A =25 C I C /I B =10
O
100
V CC =30V
0.8
0.4
V CC =10V
0 1.0
10 10 100 1000 1.0 10 100 1000
I C , Collector Current (mA)
I C , Collector Current (mA)
Fig.9 Rise Time vs. Collector Current
500
Fig.10 Storage Time vs. Collector Current
1000
100
t s, Storage Time (nS)
T A =25 OC V CC =30V I C /I B =10
T A =25 C V CC =30V I C =10I B1 =10I B2
O
t r, Rise Time (nS)
100
10 5 1.0
10
100
1000
10 1.0
10
100
1000
I C , Collector Current (mA)
I C , Collector Current (mA)
Fig.11 Fall Time vs. Collector Current
1000
T A =25 OC V CC =30V I C =10I B1 =10I B2
Fig.12 Input/Output Capacitance vs. Voltage
100
T A =25 OC f=1MHz
Capacitance (pF)
t f, Fall Time (nS)
Cib
100
10
Cob
10 1.0
10
100
1000
1 0.1
1.0
10
100
I C , Collector Current (mA)
Reverse Bias Voltage (V)
REV:A
QW-BTR06
Page 3
General Purpose Transistor
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (MMST2222A-G)
Fig.13 Gain Bandwidth Product
V CE, Collector-Emitter Voltage (V)
100
200MHz 250MHz 100MHz
Fig.14 Gain Bandwidth product vs. Collector Current
T A =25 OC
1000
10
Current Gain-Bandwidth Product (MHz)
T A =25 OC VI CE =10V
300MHz
100
1.0
250MHz
0.1 1.0
10 10 100 1000 1.0 10 100 1000
I C , Collector Current (mA)
I C , Collector Current (mA)
REV:A
QW-BTR06
Page 4
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