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MMST2222A-G Dataheets PDF



Part Number MMST2222A-G
Manufacturers Comchip Technology
Logo Comchip Technology
Description GENERAL PURPOSE TRANSISTORS
Datasheet MMST2222A-G DatasheetMMST2222A-G Datasheet (PDF)

www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMST2222A-G (NPN) RoHS Device Features -Power dissipation P CM : 0.2W (T A =25 OC) -Collector current I CM : 0.6A -Collector-base voltage V (BR)CBO : 75V -Operating and storage junction temperature range T J , T STG : -55 OC to +150 OC SOT-323 0.087 (2.20) 0.070 (1.8) 3 0.054 (1.35) 0.045 (1.15) 1 0.056 (1.40) 0.047 (1.20) 0.044 (1.10) 0.035 (0.90) 2 0.006 (0.15) 0.002 (0.05) 0.087 (2.20) 0.078 (2.00) Marking: K3P Collec.

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www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMST2222A-G (NPN) RoHS Device Features -Power dissipation P CM : 0.2W (T A =25 OC) -Collector current I CM : 0.6A -Collector-base voltage V (BR)CBO : 75V -Operating and storage junction temperature range T J , T STG : -55 OC to +150 OC SOT-323 0.087 (2.20) 0.070 (1.8) 3 0.054 (1.35) 0.045 (1.15) 1 0.056 (1.40) 0.047 (1.20) 0.044 (1.10) 0.035 (0.90) 2 0.006 (0.15) 0.002 (0.05) 0.087 (2.20) 0.078 (2.00) Marking: K3P Collector 3 0.004 (0.10) max 0.016 (0.40) 0.008 (0.20) 0.004 (0.10) min 1 Base Dimensions in inches and (millimeter) 2 Emitter Electrical Characteristics (at TA=25 C unless otherwise noted) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain V CE =10V , I C =1mA Collector-Emitter saturation voltage Base-Emitter saturation voltage I C =500mA , I B =50mA I C =500mA , I B =50mA V CE =20V , I C =20mA f=100MH Z h FE(2) V CE (sat) V BE (sat) O Conditions I C =10μA , I E =0 I C =10mA , I B =0 I E =10μA , I C =0 V CB =70V , I E =0 V CE =35V , I B =0 V EB =3V , I C =0 V CE =10V , I C =150mA Symbol V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CEO I EBO h FE(1) Min 75 40 6 Max Unit V V V 0.1 0.1 0.1 100 50 0.6 1.2 300 µA µA µA V V Transition frequency fT 300 MH Z Output capacitance V CB =10V , I E =0 f=1MH Z C ob 8 pF Delay time Rise time Storage time Fall time V CC =30V , I C =150mA V BE(off) =0.5V , I B1 =15mA td tr ts tf 10 25 225 60 nS nS nS nS REV:A V CC =30V , I C =150mA I B1 =I B2 =15mA QW-BTR06 Page 1 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.1 Grounded Emitter Output Characteristics 100 T A =25 OC 600 Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current I C, Collector Current (mA) V CE(SAT), Collector-Emitter Saturation Voltage (V) 500 400 0.3 0.2 50 300 200 100 I B =0 μ A 0.1 T A =25 OC I C /I B =10 0 0 5 10 0 1 10 100 1000 V CE , Collector-Emitter Voltage (V) I C , Collector Current (mA) Fig.3 DC Current Gain vs. Collector Current 1000 T A =25 C O Fig.4 DC Current Gain vs. Collector Current 1000 V CE =10V h FE, DC Current Gain h FE, DC Current Gain T A =125 OC 25 C -55 C O O V CE =10V 100 100 V CE =1V 10 0.1 1.0 10 100 1000 10 0.1 1.0 10 100 1000 I C , Collector Current (mA) I C , Collector Current (mA) 1000 T A =25 OC V CE =10V f=1KHz V BE(SAT), Base-Emitter Saturation Voltage (V) Fig.5 AC Current gain vs. Collector Current Fig.6 Base-Emitter Saturation Voltage vs. Collector Current 1.8 1.6 T A =25 C I C /I B =10 O h FE, AC Current Gain 1.2 100 0.8 0.4 10 0.1 1.0 10 100 1000 0 1.0 10 100 1000 I C , Collector Current (mA) I C , Collector Current (mA) REV:A QW-BTR06 Page 2 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.7 Grounded-Emitter Propagation Characteristics V BE(on), Base-Emitter Voltage (V) 1.8 1.6 1000 T A =25 C V CE =10V O Fig.8 Turn-on time vs. Collector Current 1.2 t on, Turn-on Time (nS) T A =25 C I C /I B =10 O 100 V CC =30V 0.8 0.4 V CC =10V 0 1.0 10 10 100 1000 1.0 10 100 1000 I C , Collector Current (mA) I C , Collector Current (mA) Fig.9 Rise Time vs. Collector Current 500 Fig.10 Storage Time vs. Collector Current 1000 100 t s, Storage Time (nS) T A =25 OC V CC =30V I C /I B =10 T A =25 C V CC =30V I C =10I B1 =10I B2 O t r, Rise Time (nS) 100 10 5 1.0 10 100 1000 10 1.0 10 100 1000 I C , Collector Current (mA) I C , Collector Current (mA) Fig.11 Fall Time vs. Collector Current 1000 T A =25 OC V CC =30V I C =10I B1 =10I B2 Fig.12 Input/Output Capacitance vs. Voltage 100 T A =25 OC f=1MHz Capacitance (pF) t f, Fall Time (nS) Cib 100 10 Cob 10 1.0 10 100 1000 1 0.1 1.0 10 100 I C , Collector Current (mA) Reverse Bias Voltage (V) REV:A QW-BTR06 Page 3 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMST2222A-G) Fig.13 Gain Bandwidth Product V CE, Collector-Emitter Voltage (V) 100 200MHz 250MHz 100MHz Fig.14 Gain Bandwidth product vs. Collector Current T A =25 OC 1000 10 Current Gain-Bandwidth Product (MHz) T A =25 OC VI CE =10V 300MHz 100 1.0 250MHz 0.1 1.0 10 10 100 1000 1.0 10 100 1000 I C , Collector Current (mA) I C , Collector Current (mA) REV:A QW-BTR06 Page 4 .


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