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SMD Schottky Barrier Diode
RB751G40-G (RoHS Device)
Reverse Voltage: 30 Volts Forward Current: 30 m...
www.DataSheet4U.com
SMD
Schottky Barrier Diode
RB751G40-G (RoHS Device)
Reverse Voltage: 30 Volts Forward Current: 30 mA Features:
Small Surface Mounting Type High Reliability Low Reverse Current and Low Forward Voltage
E1 L θ c E2 E b D + -
SOD-723
Mechanical Data:
Case: Molded plastic SOD-723 Terminals: Solderable per MIL-STD-750, Method 2026.1. Polarity: Indicated by cathode band. Mounting position: Any. Marking: F
Symbol A A1 b c D E E1 E2 L θ
Inches
θ Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.003 0.001 7º REF
A1 A
Millimeters
Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.500 1.300 0.200 REF 0.010 0.070 7º REF
Maximum Ratings (at TA=25ºC unless otherwise specified)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 30 30 200 125 -40~+125 Unit V V mA mA ºC ºC
Electrical Ratings (at TA=25ºC unless otherwise specified)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT 2 Min. Typ. Max. 0.37 0.5 Unit V μA pF Conditions IF=1mA VR=30V VR=1V, f=1MHz
“-G” suffix designated RoHS compliant version
Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com
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SMD
Schottky Barrier Diode
RB751G40-G (RoHS Device)
Electrical Characteristic Curves
Fig. 1 Forward Characterist...