BAP63-03

www.DataSheet4U.com Silicon PIN diode FEATURES · High speed switching for RF signals · Low diode capacitance · Low diode forward resistance · Very low series inductance · For applications up to 3 GHz. APPLICATIONS · RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD323 small SMD plastic package. BAP63 – 03 1 2 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL I VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature T s < 90°C CONDITIONS MIN. – – – -65 -65 MAX. 50 100 500 +150 +150 UNIT V mA mW °C °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =50 mA V R =35 V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 20 V; f = 1 MHz I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 |s 21| 2 TYP. 0.95 – 0.4 0.35 0.27 2.5 1.95 1.17 0.9 15.4 10.1 7.8 0.21 0.28 0.38 0.18 0.26 0.35 0.13 0.20 0.30 0.10 0.18 0.28 MAX. 1.1 10 – – 0.32 3.5 3 1.8 1.5 – – – – – – – – – – – – – – – UNIT V nA pF pF pF Ω Ω Ω Ω dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB rD diode forward resistance isolation I F = 100 mA; f = 100 MHz; note 1 V R = 0; f = 900 MHz V R = 0; f = 1800 MHz V R = 0; f = 2450 MHz |s 21| 2 insertion loss I F = 0.5 mA; f = 900 MHz I F = 0.5 m...