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BAT74V Dataheets PDF



Part Number BAT74V
Manufacturers NXP
Logo NXP
Description Schottky barrier double diode
Datasheet BAT74V DatasheetBAT74V Datasheet (PDF)

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT74V Schottky barrier double diode Product specification 2002 Sep 02 Philips Semiconductors Product specification Schottky barrier double diode FEATURES • Low forward voltage • Low capacitance • Ultra small SMD plastic package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Line termination • Inverse polarity protection. DESCRIPTION Planar Schott.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT74V Schottky barrier double diode Product specification 2002 Sep 02 Philips Semiconductors Product specification Schottky barrier double diode FEATURES • Low forward voltage • Low capacitance • Ultra small SMD plastic package • Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Line termination • Inverse polarity protection. DESCRIPTION Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two separate dies encapsulated in a SOT666 ultra small SMD plastic package. 1 1 Top view Marking code: 74. 2 3 MAM461 BAT74V PINNING PIN 1 2 3 4 5 6 anode 1 not connected cathode 2 anode 2 not connected cathode 1 DESCRIPTION handbook, halfpage 6 5 4 6 4 3 Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Ptot Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp < 10 ms Tamb ≤ 25 °C − −65 − −65 CONDITIONS − − − MIN. MAX. 30 200 300 600 230 +150 125 +125 V mA mA mA mW °C °C °C UNIT 2002 Sep 02 2 Philips Semiconductors Product specification Schottky barrier double diode CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage CONDITIONS IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA; note 1; see Fig.2 IR Cd Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT666 standard mounting conditions. Soldering The only recommended soldering method is reflow soldering. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 416 reverse current diode capacitance VR = 25 V; note 1; see Fig.3 VR = 1 V; f = 1 MHz; see Fig.4 240 320 400 500 800 2 10 MAX. BAT74V UNIT mV mV mV mV mV µA pF UNIT K/W 2002 Sep 02 3 Philips Semiconductors Product specification Schottky barrier double diode GRAPHICAL DATA MSA892 BAT74V 3 10 handbook, halfpage 10 3 IR (µA) 10 2 (2) (1) MSA893 IF (mA) 10 2 (1) (2) (3) 10 10 1 (1) (2) (3) 1 (3) 10 1 10 1 0 0.4 0.8 VF (V) 1.2 0 10 20 VR (V) 30 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 15 MSA891 Cd (pF) 10 5 0 0 10 20 VR (V) 30 f = 1 MHz; Tamb = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2002 Sep 02 4 Philips Semiconductors Product specification Schottky barrier double diode PACKAGE OUTLINE Plastic surface mounted package; 6 leads BAT74V SOT666 D A E X S Y S HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 w M A Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2002 Sep 02 5 Philips Semiconductors Product specification Schottky barrier double diode DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS BAT74V This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values giv.


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