DC8550

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DC8550 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG Rating -40 -25 -6 -1.5 -500 1 2 +150 -55 to +150 Unit V V V A mA W W o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -40 -25 -6 45 85 40 100 2% Typ - Max -0.1 -0.1 -0.5 -1.2 -1 500 - Unit V V V µA µA V V V MHz Test Conditions IC=-100µA IC=-2mA IE=-100µA VCB=-35V VEB=-6V IC=-0.8A, IB=-80mA IC=-0.8A, IB=-80mA IC=-10mA, VCE=-1V IC=-5mA, VCE=-1V IC=-100mA, VCE=-1V IC=-800mA, VCE=-1V IC=-50mA, VCE=-10V, f=100MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff...