SENSITIVE GATE SILICON CONTROLLED RECTIFIER
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR150-4 THRU DCR150-8
TECHNICAL SPECIFICATION...
Description
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR150-4 THRU DCR150-8
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 200 to 600 Volts CURRENT - 1.5 Amperes
Description
* Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 200 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ
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Pinning
1 = Cathode, 2 = Gate, 3 = Anode
2 Typ
Absolute Maximum Ratings(TA=25
Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage DCR150-4 DCR150-6 DCR150-8
o
C)
Rating 200 400 600 1.5 15 1.0 0.1 0.01 -40 to +110 -40 to +150 Unit V A A A W W
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Symbol VDRM, VRRM IT(RMS) ITSM IGM PGM PG(AV) TJ TSTG
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36)
.050 Typ (1.27)
On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature
3 2 1
.148(3.76) .132(3.36)
.050 Typ o o 5 Typ 5 Typ (1.27)
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Dimensions in inches and (millimeters)
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Electrical Characteristics o
Characteristic Peak Repetitive Forward or Reverse Of...
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