DMBT2907A

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBT2907A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -60 -5 -600 225 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEX (1) Min -60 -60 -5 75 100 100 100 50 200 2% Typ -0.2 -0.5 180 - Max -20 -50 -0.4 -1.6 -1.3 -2.6 300 8 Unit V V V nA nA V V V V MHz pF Test Conditions IC=-10µA IC=-10mA IE=-10µA VCB=-50V VCE=-30V, VEB(off)=-0.5V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA I...