PLANAR TRANSISTOR. DMBTA56 Datasheet

DMBTA56 TRANSISTOR. Datasheet pdf. Equivalent

Part DMBTA56
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBTA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFIC.
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DMBTA56
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBTA56
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-80
-80
-4
-500
225
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage
DC Current Gain(1)
Transition Frequency
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
VCE(sat)
VBE(on)
hFE1
hFE2
fT
Min
-80
-80
-4
-
-
-
-
50
50
100
Typ
-
-
-
-
-
-
-
-
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
-100
-100
-0.25
-1.2
-
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
Test Conditions
IC=-100µA
IC=-1mA
IE=-100µA
VCB=-80V
VCE=-60V
IC=-100mA, IB=-10mA
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-100mA, VCE=-1V
IC=-10mA, VCE=-2V







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