PLANAR TRANSISTOR. DMBTH10 Datasheet

DMBTH10 TRANSISTOR. Datasheet pdf. Equivalent

Part DMBTH10
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBTH10 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFIC.
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DMBTH10
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBTH10
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in VHF & UHF oscillators and VHF
mixer in tuner of a TV receiver.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
20
15
3
50
225
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage
DC Current Gain(1)
Transition Frequency
Output Capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(on)
hFE
fT
Cob
Min
20
15
3
-
-
-
-
60
650
-
Typ
-
-
-
-
-
-
-
-
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
100
100
0.5
0.95
-
-
0.7
Unit
V
V
V
nA
nA
V
V
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IC=10µA
VCB=20V
VEB=2V
IC=4mA, IB=0.4mA
IC=4mA, VCE=10V
IC=4mA, VCE=10V
IC=4mA, VCB=10V, f=100MHz
VCB=10V, f=1MHz







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