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DC COMPONENTS CO., LTD.
R
DXT2907A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high -speed, medium-power switching applications.
SOT-89
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -60 -5 -600 1.2 +150 -55 to +150 Unit V V V mA W
o o
.167(4.25) .159(4.05) 1 2 3
.102(2.60) .095(2.40)
.020(0.51) .014(0.36)
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2
Min -60 -60 -5 75 100 100 100 50 200 -
Typ -0.2 -0.5 -
Max -10 -50 -0.4 -1.6 -1.3 -2.6 300 8
Unit V V V nA nA mV V V V MHz pF
Test Conditions IC=-10µA IC=-10mA IE=-10µA VCB=-50V VCE=-30V, VBE=-0.5V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-100µA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V IC=-500mA, VCE=-10V VCE=-20V, f=100MHz, IC=-50mA VCB=-10V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1)
DC Current Gain(1)
hFE3 hFE4 hFE5
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
fT Cob 380µs, Duty Cycle 2%
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