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DXT2907A Dataheets PDF



Part Number DXT2907A
Manufacturers Dc Components
Logo Dc Components
Description NPN Transistor
Datasheet DXT2907A DatasheetDXT2907A Datasheet (PDF)

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT2907A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and high -speed, medium-power switching applications. SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissi.

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT2907A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and high -speed, medium-power switching applications. SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -60 -5 -600 1.2 +150 -55 to +150 Unit V V V mA W o o .167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40) .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 Min -60 -60 -5 75 100 100 100 50 200 - Typ -0.2 -0.5 - Max -10 -50 -0.4 -1.6 -1.3 -2.6 300 8 Unit V V V nA nA mV V V V MHz pF Test Conditions IC=-10µA IC=-10mA IE=-10µA VCB=-50V VCE=-30V, VBE=-0.5V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-100µA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V IC=-500mA, VCE=-10V VCE=-20V, f=100MHz, IC=-50mA VCB=-10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) hFE3 hFE4 hFE5 Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width fT Cob 380µs, Duty Cycle 2% .


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