PLANAR TRANSISTOR. DXT2907A Datasheet

DXT2907A TRANSISTOR. Datasheet pdf. Equivalent

Part DXT2907A
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT2907A DISCRETE SEMICONDUCTORS TECHNICAL SPECIFI.
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DXT2907A
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXT2907A
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier and high
-speed, medium-power switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
-60
-60
-5
-600
1.2
+150
-55 to +150
Unit
V
V
V
mA
W
oC
oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO -60
-
-
Collector-Emitter Breakdown Voltage
BVCEO -60
-
-
Emitter-Base Breakdown Volatge
BVEBO -5
-
-
Collector Cutoff Current
ICBO
ICEX
-
-
- -10
- -50
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
-0.2 -0.4
-0.5 -1.6
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
-
-
- -1.3
- -2.6
hFE1
75
-
-
DC Current Gain(1)
hFE2
hFE3
100
100
-
-
-
-
hFE4 100 - 300
hFE5
50
-
-
Transition Frequency
fT 200 -
-
Output Capacitance
Cob - - 8
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
mV
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-10µA
IC=-10mA
IE=-10µA
VCB=-50V
VCE=-30V, VBE=-0.5V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-100µA, VCE=-10V
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-150mA, VCE=-10V
IC=-500mA, VCE=-10V
VCE=-20V, f=100MHz, IC=-50mA
VCB=-10V, f=1MHz







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