PLANAR TRANSISTOR. DXT3904 Datasheet

DXT3904 TRANSISTOR. Datasheet pdf. Equivalent

Part DXT3904
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT3904 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFIC.
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DXT3904
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXT3904
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
60
40
6
200
1
+150
-55 to +150
Unit
V
V
V
mA
W
oC
oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 60
-
-
Collector-Emitter Breakdown Voltage
BVCEO 40
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICEX
-
- 50
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
- 0.2
- 0.3
Base-Emitter Saturation Voltage(1)
VBE(sat)1 0.65 - 0.85
VBE(sat)2
-
- 0.95
hFE1
40
-
-
DC Current Gain(1)
hFE2
70
-
-
hFE3 100 - 300
hFE4
60
-
-
hFE5
30
-
-
Transition Frequency
fT 300 -
-
Output Capacitance
Cob - - 4
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCE=30V, VBE=3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=100µA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
IC=50mA, VCE=1V
IC=100mA, VCE=1V
VCE=20V, f=100MHz, IC=10mA
VCB=5V, f=1MHz







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