PLANAR TRANSISTOR. DXT5401 Datasheet

DXT5401 TRANSISTOR. Datasheet pdf. Equivalent

Part DXT5401
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT5401 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFIC.
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DXT5401
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXT5401
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring
high breakdown voltages.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-160
-150
-5
-500
1
+150
-55 to +150
Unit
V
V
V
mA
W
oC
oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -160
Collector-Emitter Breakdown Voltage
BVCEO -150
Emitter-Base Breakdown Volatge
BVEBO -5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
-
-
DC Current Gain(1)
hFE1
hFE2
50
60
hFE3
50
Transition Frequency
fT 100
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
240
-
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-120V
VEB=-5V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-50mA, VCE=-5V
VCE=-10V, f=100MHz, IC=-10mA
VCB=-10V, f=1MHz







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