PLANAR TRANSISTOR. DXT5551 Datasheet

DXT5551 TRANSISTOR. Datasheet pdf. Equivalent

Part DXT5551
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXT5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFIC.
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DXT5551
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXT5551
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring
high breakdown voltages.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
180
160
6
500
1.2
+150
-55 to +150
Unit
V
V
V
mA
W
oC
oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 180
-
-
Collector-Emitter Breakdown Voltage
BVCEO 160
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICBO
-
- 50
Emitter Cutoff Current
IEBO
-
- 50
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
- 0.15
- 0.2
Base-Emitter Saturation Voltage(1)
VBE(sat)1
-
-
1
VBE(sat)2
-
-
1
DC Current Gain(1)
hFE1
hFE2
hFE3
80
80
30
--
- 250
--
Transition Frequency
fT 100 - 300
Output Capacitance
Cob - - 6
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
VCE=10V, f=100MHz, IC=10mA
VCB=10V, f=1MHz







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