PLANAR TRANSISTOR. DXTA13 Datasheet

DXTA13 TRANSISTOR. Datasheet pdf. Equivalent

Part DXTA13
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXTA13 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICA.
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DXTA13
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXTA13
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for applications requiring extremely high
current gain.
Pinning
1 = Base
2 = Collector
3 = Emitter
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VEBO
IC
PD
TJ
TSTG
Rating
30
30
10
300
1
+150
-55 to +150
Unit
V
V
V
mA
W
oC
oC
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 30
-
-
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
BVCES
BVEBO
ICBO
IEBO
VCE(sat)
VBE(on)
30
10
-
-
-
-
--
--
- 100
- 100
- 1.5
-2
DC Current Gain(1)
hFE1
hFE2
5K
10K
-
-
-
-
Transition Frequency
fT 125 -
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
V
V
-
-
MHz
Test Conditions
IC=100µA, IE=0
IC=100µA, IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
VCE=5V, f=100MHz, IC=10mA







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