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DC COMPONENTS CO., LTD.
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DXTA94
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXI...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DXTA94
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for applications requiring high breakdown voltage.
SOT-89
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -400 -400 -6 -500 1 +150 -55 to +150 Unit V V V mA W
o o
.167(4.25) .159(4.05) 1 2 3
.102(2.60) .095(2.40)
.020(0.51) .014(0.36)
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) hFE1 hFE2 hFE3
Min -400 -400 -6 40 50 45
Typ -
Max -100 -500 -100 -0.35 -0.5 -0.75 -0.75 300 -
Unit V V V nA nA nA V V V V -
Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-400V VCE=-400V, VBE=0 VEB=-6V IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-50mA, VCE=-10V IC=-100mA, VCE=-10V
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emi...