PLANAR TRANSISTOR. DXTA94 Datasheet

DXTA94 TRANSISTOR. Datasheet pdf. Equivalent

Part DXTA94
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXTA94 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICA.
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DXTA94
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXTA94
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
-400
-400
-6
-500
1
+150
-55 to +150
Unit
V
V
V
mA
W
oC
oC
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO -400
-
-
Collector-Emitter Breakdown Voltage
BVCEO -400
-
-
Emitter-Base Breakdown Volatge
BVEBO -6
-
-
Collector Cutoff Current
ICBO
ICES
-
-
- -100
- -500
Emitter Cutoff Current
IEBO
-
- -100
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
- -0.35
- -0.5
Base-Emitter Saturation Voltage(1)
VCE(sat)3
VBE(sat)
-
-
- -0.75
- -0.75
hFE1
40
-
-
DC Current Gain(1)
hFE2
hFE3
50
45
- 300
--
hFE4
40
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-400V
VCE=-400V, VBE=0
VEB=-6V
IC=-1mA, IB=-0.1mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-1mA, VCE=-10V
IC=-10mA, VCE=-10V
IC=-50mA, VCE=-10V
IC=-100mA, VCE=-10V







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