DXTA94

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXTA94 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -400 -400 -6 -500 1 +150 -55 to +150 Unit V V V mA W o o .167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40) .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) hFE1 hFE2 hFE3 Min -400 -400 -6 40 50 45 Typ - Max -100 -500 -100 -0.35 -0.5 -0.75 -0.75 300 - Unit V V V nA nA nA V V V V - Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-400V VCE=-400V, VBE=0 VEB=-6V IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-50mA, VCE=-10V IC=-100mA, VCE=-10V Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emi...