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DC COMPONENTS CO., LTD.
R
DXTD965
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAX...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DXTD965
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for use in AF output amplifier and flash unit.
SOT-89
Pinning
1 = Base 2 = Collector 3 = Emitter
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak PT=10mS) Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD TJ TSTG Rating 40 20 7 5 8 1.2 +150 -55 to +150 Unit V V V A A W
o o
.167(4.25) .159(4.05) 1 2 3
.102(2.60) .095(2.40)
.020(0.51) .014(0.36)
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle 2%
Min 40 20 7 340 150 -
Typ 0.35 150 -
Max 0.1 0.1 1 800 50
Unit V V V µA µA V MHz pF IC=1mA
Test Conditions IC=100µA IE=10µA VCB=10V VEB=7V IC=3A, IB=0.1A IC=0.5A, VCE=2V IC=2A, VCE=2V IE=50mA, VCE=6V VCB=20V, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) DC Current Gain(1) Transition ...