PLANAR TRANSISTOR. DXTD965 Datasheet

DXTD965 TRANSISTOR. Datasheet pdf. Equivalent

Part DXTD965
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXTD965 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFIC.
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DXTD965
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXTD965
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AF output amplifier and flash unit.
Pinning
1 = Base
2 = Collector
3 = Emitter
.066(1.70)
.059(1.50)
SOT-89
.063(1.60)
.055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (continuous)
IC
Collector Current (peak PT=10mS) IC
Total Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
TSTG
Rating
40
20
7
5
8
1.2
+150
-55 to +150
Unit
V
V
V
A
A
W
oC
oC
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 40
Collector-Emitter Breakdown Voltage
BVCEO 20
Emitter-Base Breakdown Volatge
BVEBO
7
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
-
-
DC Current Gain(1)
hFE1
hFE2
340
150
Transition Frequency
fT -
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
0.35
-
-
150
-
-
-
-
0.1
0.1
1
800
-
-
50
Unit
V
V
V
µA
µA
V
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=10V
VEB=7V
IC=3A, IB=0.1A
IC=0.5A, VCE=2V
IC=2A, VCE=2V
IE=50mA, VCE=6V
VCB=20V, f=1MHz
Classification of hFE1
Rank
Range
R
340~600
S
560~800







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