IRG4PC50UD. G4PC50UD Datasheet

G4PC50UD IRG4PC50UD. Datasheet pdf. Equivalent

Part G4PC50UD
Description IRG4PC50UD
Feature www.DataSheet4U.com PD 91471B IRG4PC50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REC.
Manufacture International Rectifier
Datasheet
Download G4PC50UD Datasheet




G4PC50UD
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PD 91471B
IRG4PC50UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Absolute Maximum Ratings
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
55
27
220
220
25
220
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.64
0.83
------
40
------
Units
°C/W
g (oz)
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G4PC50UD
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IRG4PC50UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ----
VCE(on)
Collector-to-Emitter Saturation Voltage ----
----
----
VGE(th)
Gate Threshold Voltage
3.0
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ----
gfe Forward Transconductance T
16
ICES
Zero Gate Voltage Collector Current
----
----
VFM Diode Forward Voltage Drop
----
----
IGES Gate-to-Emitter Leakage Current ----
----
0.60
1.65
2.0
1.6
----
-13
24
----
----
1.3
1.2
----
---- V
---- V/°C
2.0
---- V
----
6.0
---- mV/°C
---- S
250 µA
6500
1.7 V
1.5
±100 nA
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 27A
VGE = 15V
IC = 55A
See Fig. 2, 5
IC = 27A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 27A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 25A
See Fig. 13
IC = 25A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
---- 180 270
IC = 27A
---- 25 38 nC VCC = 400V
See Fig. 8
---- 61 90
---- 46 ----
VGE = 15V
TJ = 25°C
---- 25 ----
---- 140 230
ns IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0
---- 74 110
Energy losses include "tail" and
---- 0.99 ----
diode reverse recovery.
---- 0.59 ---- mJ See Fig. 9, 10, 11, 18
---- 1.58 1.9
---- 44 ----
---- 27 ----
---- 240 ----
---- 130 ----
TJ = 150°C, See Fig. 9, 10, 11, 18
ns IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0
Energy losses include "tail" and
---- 2.3 ---- mJ diode reverse recovery.
---- 13 ---- nH Measured 5mm from package
---- 4000 ----
---- 250 ----
VGE = 0V
pF VCC = 30V
See Fig. 7
---- 52 ----
ƒ = 1.0MHz
---- 50 75 ns TJ = 25°C See Fig.
---- 105 160
TJ = 125°C 14
IF = 25A
---- 4.5 10 A TJ = 25°C See Fig.
---- 8.0 15
TJ = 125°C 15
---- 112 375 nC TJ = 25°C See Fig.
VR = 200V
---- 420 1200
TJ = 125°C
---- 250 ---- A/µs TJ = 25°C
16 di/dt 200A/µs
---- 160 ----
TJ = 125°C
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